Discrete Devices 2008-6
SANYO Discrete Devices SANYO's environmentally-considered discrete "ECoP" contributes to the realization of comfortable life in Contents various aspects.
Devices for Mobile Equipment ■ Application Block ■ Charger [GSM] Charger DC-DC Converter / Load SW P3 Down Converter (Low end) AC Adapter P6 CPU AC adapter System Control IC Down Converter (High end) Li-ion Battery P5 Input 5V to 6V/0.5A to 1A IrDA MIC P11 M P12 USB IF Q2 Li-ion battery MOSFETs (Pch) + Schottky Barrier Diodes (or MOSFETs (Pch)) Type No. P11 Package CPH5 Card IF Q1+D1 VEC2822 VEC8 Flash CCD etc.
Devices for Mobile Equipment ■ Li-ion Battery [CDMA] P+ TR1 B+ USB bus power CELL SBD1 AC adapter External connection terminal Control IC B- TR2 Main unit circuit (load) Charging terminal Input 5V to 6V/0.6A to 1A MOSFET1 Power management IC SBD2 PLi-ion battery Battery Protection Recommended Bipolar Transistors (PNP) VCEO [V] -12 -15 -30 IC [A] MCPH3 2.5 3.0 6.0 2.0 3.0 5.0 ❈: Development MCPH6 CPH3 MCH3143 MCH3106 MCH3144 MCH3109 CPH6 CPH6121 ❈ VEC1104 CPH6122 30 0.
Devices for Mobile Equipment ■ DC-DC Converter/Load SW [Bipolar Transistor Use Example] (1) DC-DC Converter Recommended MOSFETs Back Converter (Step Down) Package SCH6 MCPH5 CPH5 VEC8 Synchronous Back Converter (Pch + Nch or Nch + Nch) SCH2809 SCH2810 SCH2811 MCH5815 MCH5818 MCH5802 MCH5805 CPH5812 CPH5815 CPH5818 CPH5802 CPH5835 CPH5822 VEC2811 VEC2817 Package SCH6 MCPH3/5 CPH3/5 Boost Converter (Step Up) Type No. Type No.
Devices for Mobile Equipment ■ LCD-Backlight [Power MOSFET Use Example] (2) Load SW Recommended MOSFETs Push-Pull - EMH2603 30V MCH6614 CPH6615 VEC2612 EMH2602 Pch Nch Pch Nch Pch Nch Pch Nch Pch Nch Pch Nch Pch Nch Pch Nch Pch Nch Pch Nch Pch Nch Pch Nch Pch Nch Pch Nch Pch Nch Pch Nch ● MCH6627 ● MCH6644 ● MCH6628 MCH6613 MCPH6 MCH6614 MCH6615 MCH6634 ● CPH6614 ● CPH6615 CPH6 CPH6605 CPH6610 ● VEC2602 VEC8 ● VEC2612 ● EMH2602 EMH8 ● EMH2603 SCH2602 SCH6 M07 P2 N1 N2 VDSS [V] VGSS [V]
Devices for Mobile Equipment ■ Flash Unit ■ Condenser Microphone [Use Example] [High-Frequency Devices Use Example] Battery FRD Trans 300V The electric capacity changes Sound Xe-tube Mobile phone Hands-free Digital camera Digital video camera Portable games other diaphragm Back plate Trigger transformer CM IGBT DRIVER IGBT G S Control IC S/W element VCC D Impedance transformation VOUT Electric signal output High-Frequency Devices for Condenser Microphone Absolute maximum ratings/Ta=2
Devices for Mobile Equipment ■ Devices for Motor [MOSFETs Use Example] Devices for Fan Motor Single-phase Motor (H-Bridge, Half pre.): #5 Single-phase Motor (H-Bridge): #6 Q1 M Q2 Q5 Q3 M Q1 Q3 Q1 LB11660V Motor Driver [Bipolar Transistor Use Example] Three-phase Motor: #7 Q2 Q2 Q4 Q6 M • For the purpose of power consumption reduction, low saturated voltage transistor is recommended. • PCP and TP packages with good radiation are recommended.
Devices for SW Power Supply ■ Switching Power Supply Types & Recommended Power MOSFETs Map ■ Switching Devices [MOSFET/FRD/SBD Use Example] Universal AC Input 20 Forward (1 or 2 used) VDSS: 600 to 800V ACIN Drain Current/ID[A] FRD Full-bridge (4 used) VDSS: 450 to 500V 14 SBD PFC MOSFET Flyback RCC or PWM VDSS: 600 to 800V 8 PFC Control Half-bridge (2 used) VDSS: 450 to 500V DC Output When output becomes large, a high VDSS is required for the device ex) Flyback Circuit Output 80W → VDSS≥600V
Devices for SW Power Supply ■ LCD TV (3) Bipolar Transistors for Adapter Recommended Devices by LCD-TV Panel Size [Bipolar Transistor Use Example] (1) When BL inverter is half-bridge circuit, and AV output is flyback circuit Output +5.6 to 5.
Devices for SW Power Supply (2) The example when BL inverter adoptes PFC voltage direct input circuit, and AV output adopts flyback circuit (3) Devices for BL Inverter 1) Recommended Devices for Bridge Circuit Push-Pull Type PFC Circuit PFC FRD(1) PFC Direct input BL Inverter Main SW MOSFET(3) FRD(2) Pulse IN PFC Control Multi CCFL, Parallel FRD(2) [Feature] • Compared with half-bridge type, although doubled voltage is needed, meanwhile RDS(on) can be suppressed due to the use of Nch, so a good sym
Devices for SW Power Supply Full-bridge Type, Half-bridge Type Self-excitation Type (collector resonance) [Feature: Full-bridge/Half-bridge Type] • Pch/Nch drive • A large current device can drive multi tubes, thus the needed parts count can be reduced. [Feature] • Multi tubes can be driven by using a power device with large current capacity. → also, the number of inverter circuits and used parts can be reduced. • 4 to 8 tubes can be driven by circuit. • Best choice for low-cost sets.
Devices for SW Power Supply (4) Devices for Power MOSFET Buffer 2) High Voltage Driver ExPD 1) Low Side Driver ExPD [MOSFET, IGBT Gate driver IC] [ExPD Use Example] [Application] • PDP, LCD-backlight, inverter light, liquid crystal projector, HID drive, motor drive, half-bridge/full-bridge power supply, etc. • High withstand voltage driver (600V) • Under-voltage protection function is built in [ExPD Use Example] Control IC HIN Load INA Control IC • Withstand voltage of 25V is assured.
Devices for SW Power Supply 3) LCD-Backlight Inverter: ExPD 5) Air conditioner fan motor drive: ExPD [TND3xx Use Example: MOSFET Driver] [TND512MD Use Example] Half-Bridge MOSFET Full-Bridge MOSFET Push-Pull MOSFET VM C1 1000μF TND3xx C16 104 T1 T4 C17 104 T5 GND VDD VDD C2 104 P1 P2 N1 VDD VOUT UOUT P1 C18 104 WOUT CCFL N1 GND TND3xx T4 T2 N2 T6 TND3xx VDD N1 CCFL N2 CCFL TND3xx GND VCC GND R8 C3 10μF R7 R9 [TND3xx Use Example: High-side FET Drive, Various App
Devices for SW Power Supply ■ DC-DC Converter IC 6) Bipolar Transistors: Separately-excited Inverter (MOSFET for Gate Drive) TN8D41A/51A, TN5D41A/51A/61A: Separately-excited step-down switching regulator [Bipolar Transistor Use Example] [Functions/Features] • Large current IO max 8A (TN8D41A/51A) IO max 5A (TN5D41A/51A/61A) • High efficiency Vertical-type P-channel power MOSFET built-in • High withstand voltage VIN max 57V • Five external parts • IC with large IC is recommended for driving large-capaci
Devices for Lighting ■ Inverter light [Bipolar Transistor Use Example: Ball Lamp] [MOSFET Use Example] D2 H DB1 L1 L1 D3 RD1006LS(600V/10A) D4 OUT1 for Inverter circuit use (2 devices are used) Inductor DB N C2 R2 Q2 OUT2 Q1 NPN V1 AC C5 OUT3 Q3 for PFC circuit C + + C1 C4 TND506 to TND509 OUT4 + C1 C3 L2 C2 Light Q4 R Q2 NPN Light Control IC R R Recommended Devices and Spec: Surface Mount Type Recommended devices by inverter lighting set [AC=200V input] TO-220 max VCE
Devices for Lighting Devices for Modem and Infrared Sensor ■ Emergency Lamp ■ Devices for Modem [2SK4043LS Use Example] [High-Voltage Transistor Use Example for MODEM Circuit] High-voltage TR TIP FUSE T1 Lamp Safety & Protection Modular Jack Modem Controller RING AC High-voltage TR Q1 + Control IC C1 Q2 High-voltage TR FUSE RS Battery D9 + Transistors for Modem Circuit MOSFETs ● 2SK4043LS Electrical characteristics/Ta=25˚C ●: New products Absolute maximum ratings/Ta=25˚C Type No.
Devices for Satellite/GPS FM Transmitter ■ Satellite LNB ■ FM Transmitter [Satellite LNB] [Varactor Diode Use Example] Frequency: 9 to 14GHz VCC=+14.4V (From cigarette Lighter in a car) RF IN V_Reg LNA. MIX IF Amp. CONT. 3.3V IF OUT 3LN02M✕5 VDD AS Lo CLK RF OUT LV2282VA DATA LO ATT PON VCO Ultrahigh-Frequency Transistors f_Ref Absolute maximum ratings/Ta=25˚C Type No.
Ordering number : EP124 SANYO Semiconductor Co.,Ltd. Website http://www.semic.sanyo.co.jp/index_e.htm This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice. SANYO Semiconductor Co., Ltd.
