HIP-195BA19 datasheet

Module Efficiency: 16.8%
Cell Efficiency: 19.3%
Power Output: 195 Watts
High Efficiency
HIT
®
Power solar panels are leaders in sunlight conversion efficiency. Obtain
maximum power within a fixed amount of space. Save money using fewer system
attachments and racking materials, and reduce costs by spending less time install-
ing per watt.
Power Guarantee
SANYO’s power ratings for HIT Power panels guarantee customers receive 100%
of the nameplate rated power (or more) at the time of purchase, enabling owners
to generate more kWh per rated watt, quicken investment returns, and help realize
complete customer satisfaction.
Temperature Performance
As temperatures rise, HIT Power solar panels produce 10% or more electricity
(kWh) than conventional crystalline silicon solar panels at the same temperature.
Proprietary Technology
HIT solar cells are hybrids of single crystalline silicon surrounded by ultra-thin
amorphous silicon layers, and are available solely from SANYO. HIT Power models
are ideal for grid-connected solar systems, areas with performance based incen-
tives, and renewable energy credits.
Structural Strength
HIT Power panels have a double-wall black anodized aluminum frame for extra
strength, and are tested to 60PSF. The panels come pre-equipped with a touch-
safe junction box, USE-2 outdoor rated cables, MC4
locking connectors, and
are UL 1703 safety rated for wind, hail, and fire.
Valuable Features
HIT Power solar panels operate silently, have no moving parts and are among the
lightest per watt in the industry. Unique eco-packaging minimizes cardboard waste
at the job site. The packing density of the panels reduces transportation, fuel, and
storage costs per installed watt.
Quality Products
SANYO silicon wafers located inside HIT solar panels are made in California, USA,
and the panels are assembled in an ISO 9001 (quality), 14001 (environment), and
18001 (safety) certified factory. The panels have a Limited 20-Year Power Output
and 5-Year Product Workmanship Warranty.
SANYO HIT
®
Solar Cell Structure
Unnecessary Section When Using SANYO
Increased Performance with SANYO
Normalized Output Power
HIT
c-Si
Time
Approx.
10% Up
Module Temp.75°C
Kobe (Japan), July 24, 2007,
Faced due South, Tilt angle 30°
0.8
0.5
5 am 7 am 9 am 11 am 1pm 3 pm 5 pm 7 pm
n
p-type/i-type
(Ultra-thin amorphous silicon layer)
Front-side
electrode
Rear-side
electrode
Thin mono
crystalline
silicon wafer
i-type/n-type
(Ultra-thin amorphous silicon layer)
HIT Photovoltaic Module

Summary of content (2 pages)