Datasheet

Sensors
NXP Semiconductors 7
MMA8452Q
2.2 Electrical characteristics
Table 3. Electrical characteristics @ VDD = 2.5 V, VDDIO = 1.8 V, T = 25 °C unless otherwise noted.
Parameter Test conditions Symbol Min Typ Max Unit
Supply voltage — VDD
(1)
1. There is no requirement for power supply sequencing. The VDDIO input voltage can be higher than the VDD input voltage.
1.95 2.5 3.6 V
Interface supply voltage — VDDIO
(1)
1.62 1.8 3.6 V
Low-power mode
ODR = 1.56 Hz
I
dd
LP
—
6—
μA
ODR = 6.25 Hz —
6—
ODR = 12.5 Hz —
6—
ODR = 50 Hz —
14 —
ODR = 100 Hz —
24 —
ODR = 200 Hz —
44 —
ODR = 400 Hz —
85 —
ODR = 800 Hz —
165 —
Normal mode
ODR = 1.56 Hz
I
dd
— 24 —
μA
ODR = 6.25 Hz —
24 —
ODR = 12.5 Hz —
24 —
ODR = 50 Hz —
24 —
ODR = 100 Hz —
44 —
ODR = 200 Hz —
85 —
ODR = 400 Hz —
165 —
ODR = 800 Hz —
165 —
Current during boot sequence, 0.5 mSec max
duration using recommended bypass cap
VDD = 2.5 V Idd Boot
— — 1mA
Value of capacitor on BYP pin –40 °C 85 °C Cap
75 100 470 nF
Standby mode current @ 25 °C
VDD = 2.5 V, VDDIO = 1.8 V,
standby mode
I
dd
Stby — 1.8 5 μA
Digital high-level input voltage
SCL, SDA, SA0
—
VIH 0.7*VDDIO — —
V
Digital low-level input voltage
SCL, SDA, SA0
—
VIL — — 0.3*VDDIO
V
High-level output voltage
INT1, INT2 I
O
= 500 μA VOH 0.9*VDDIO — —
V
Low-level output voltage
INT1, INT2 I
O
= 500 μA VOL — — 0.1*VDDIO
V
Low-level output voltage
SDA I
O
= 500 μAVOLS—
—
0.1*VDDIO
V
Power on ramp time — 0.001 — 1000 ms
Boot time
Time from VDDIO on and
VDD > VDD min until I
2
C is ready
for operation, Cbyp = 100 nF
Tbt — 350 500 µs
Turn-on time
(2)
2. Note the first sample is typically not very precise. Depending on ODR/MODS setting, a minimum of three samples is recommended for full
precision.
Time to obtain valid data from
standby mode to active mode.
Ton1 —
2/ODR + 1 ms
s
Turn-on time
Time to obtain valid data from valid
voltage applied.
Ton2 — 2/ODR + 2 ms —
Operating temperature range — Top –40 — +85 °C