Datasheet

SKM400GA12V
© by SEMIKRON Rev. 4 – 15.08.2012 1
SEMITRANS
®
4
GA
SKM400GA12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
• Switched reluctance motor
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
CES
T
j
=25°C
1200 V
I
C
T
j
= 175 °C
T
c
=25°C
612 A
T
c
=80°C
467 A
I
Cnom
400 A
I
CRM
I
CRM
= 3xI
Cnom
1200 A
V
GES
-20 ... 20 V
t
psc
V
CC
= 720 V
V
GE
≤ 15 V
V
CES
≤ 1200 V
T
j
=125°C
10 µs
T
j
-40 ... 175 °C
Inverse diode
I
F
T
j
= 175 °C
T
c
=25°C
440 A
T
c
=80°C
329 A
I
Fnom
400 A
I
FRM
I
FRM
= 3xI
Fnom
1200 A
I
FSM
t
p
= 10 ms, sin 180°, T
j
=25°C
1980 A
T
j
-40 ... 175 °C
Module
I
t(RMS)
T
terminal
=80°C
500 A
T
stg
-40 ... 125 °C
V
isol
AC sinus 50 Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
I
C
=400A
V
GE
=15V
chiplevel
T
j
=25°C
1.75 2.20 V
T
j
=150°C
2.20 2.50 V
V
CE0
chiplevel
T
j
=25°C
0.94 1.04 V
T
j
=150°C
0.88 0.98 V
r
CE
V
GE
=15V
chiplevel
T
j
=25°C
2.02 2.90 m
T
j
=150°C
3.30 3.80 m
V
GE(th)
V
GE
=V
CE
, I
C
= 16 mA 5.5 6 6.5 V
I
CES
V
GE
=0V
V
CE
= 1200 V
T
j
=25°C
0.1 0.3 mA
T
j
=150°C
mA
C
ies
V
CE
=25V
V
GE
=0V
f=1MHz
24.04 nF
C
oes
f=1MHz
2.36 nF
C
res
f=1MHz
2.356 nF
Q
G
V
GE
= - 8 V...+ 15 V
4420 nC
R
Gint
1.88 
t
d(on)
V
CC
= 600 V
I
C
=400A
V
GE
=±15V
R
G on
=3
R
G off
=3
di/dt
on
= 9800 A/µs
di/dt
off
=5000A/µs
du/dt
off
= 7600 V/
µs
T
j
=150°C
350 ns
t
r
T
j
=150°C
60 ns
E
on
T
j
=150°C
39 mJ
t
d(off)
T
j
=150°C
700 ns
t
f
T
j
=150°C
65 ns
E
off
T
j
=150°C
42 mJ
R
th(j-c)
per IGBT 0.072 K/W