Datasheet

© by SEMIKRON B 1 – 43
SEMIPACK
®
1
Thyristor/ Diode Modules
SKKT 41 SKKH 41
SKKT 42 SKKH 42
SKKT 42B SKKL 42
2)
SKKT 41 SKKH 41
SKKT 42 SKKH 42
SKKL 42
Features
• Heat transfer through aluminium
oxide ceramic isolated metal
baseplate
• Hard soldered joints for high
reliability
• UL recognized, file no. E 63 532
Typical Applications
• DC motor control (e. g. for
machine tools)
• AC motor soft starters
• Temperature control (e. g. for
ovens, chemical processes)
• Professional light dimming
(studios, theaters)
1)
Also available in SKKT 42 B
configuration (case A 48).
2)
SKKL 42 available on request
3)
/20 E, /22 E max. 30 mA
4)
See the assembly instructions
V
RSM
V
RRM
(dv/ I
TRMS
(maximum value for continuous operation)
V
DRM
dt)
cr
75 A
I
TAV
(sin. 180; T
case
= 68 °C)
VVV/µs48 A
500 400 500 – – SKKH 41/04 D –
700 600 500 SKKT 41/06 D SKKT 42/06 D SKKH 41/06 D SKKH 42/06 D
900 800 500 SKKT 41/08 D SKKT 42/08 D
1)
SKKH 41/08 D SKKH 42/08 D
1300 1200 500 SKKT 41/12 D – SKKH 41/12 D –
1300 1200 1000 SKKT 41/12 E SKKT 42/12 E
1)
SKKH 41/12 E SKKH 42/12 E
1500 1400 1000 SKKT 41/14 E SKKT 42/14 E
1)
SKKH 41/14 E SKKH 42/14 E
1700 1600 1000 SKKT 41/16 E SKKT 42/16 E
1)
SKKH 41/16 E SKKH 42/16 E
1900 1800 1000 SKKT 41/18 E SKKT 42/18 E
1)
SKKH 41/18 E SKKH 42/18 E
2100 2000 1000 SKKT 41/20 E SKKT 42/20 E
1)
––
2300 2200 1000 SKKT 41/22 E SKKT 42/22 E
1)
––
Symbol Conditions
SKKT 41 SKKT 42
SKKH 41 SKKT 42B
SKKH 42
I
TAV
sin. 180; T
case
= 74 °C48 A
T
case
= 85 °C40 A
I
D
B2/B6 T
amb
= 45 °C; P 3/180 50 A/60 A
T
amb
= 35 °C; P 3/180 F 85 A/110 A
I
RMS
W1/W3 T
amb
= 35 °C; P 3/180 F 110 A/3 x 85 A
I
TSM
T
vj
= 25 °C; 10 ms 1 000 A
T
vj
= 125 °C; 10 ms 850 A
i
2
tT
vj
= 25 °C; 8,3 ... 10 ms 5 000 A
2
s
T
vj
= 125 °C; 8,3 ... 10 ms 3 600 A
2
s
t
gd
T
vj
= 25 °C; I
G
= 1 A; di
G
/dt = 1 A/µs1 µs
t
gr
V
D
= 0,67
.
V
DRM
2 µs
(di/dt)
cr
T
vj
= 125 °C 150 A/µs
t
q
T
vj
= 125 °C typ. 80 µs
I
H
T
vj
= 25 °C; typ. 150 mA; max. 250 mA
I
L
T
vj
= 25 °C; R
G
= 33 Ω typ. 300 mA; max. 600 mA
V
T
T
vj
= 25 °C; I
T
= 200 A max. 1,95 V
V
T(TO)
T
vj
= 125 °C1 V
r
T
T
vj
= 125 °C 4,5 mΩ
I
DD
; I
RD
T
vj
= 125 °C; V
DD
= V
DRM
; V
RD
= V
RRM
max. 15 mA
3)
V
GT
T
vj
= 25 °C; d. c. 3 V
I
GT
T
vj
= 25 °C; d. c. 150 mA
V
GD
T
vj
= 125 °C; d. c. 0,25 V
I
GD
T
vj
= 125 °C; d. c. 6 mA
R
thjc
cont. 0,65 °C/W / 0,33 °C/W
sin. 180
per thyristor/per module
0,69 °C/W / 0,35 °C/W
rec.120 0,73 °C/W / 0,37 °C/W
R
thch
0,2 °C/W / 0,1 °C/W
T
vj
, T
stg
– 40 ... +125 °C
V
isol
a. c. 50 Hz; r.m.s.; 1 s/1 min 3600 V∼ / 3000 V ∼
M
1
to heatsink
SI units / US units
5 Nm/44 lb. in. ± 15 %
4)
M
2
to terminals 3 Nm/26 lb. in. ± 15 %
a5
.
9,81 m/s
2
w approx. 120 g
Case → page B 1 – 93 SKKT 41: A 5 SKKL 42: A 59
SKKH 41: A 6 SKKT 42: A 46
SKKH 42: A 47 SKKT 42B: A 48
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