Data Sheet
Table Of Contents
- Datasheet
- Preface
- About this Datasheet
- Product Features
- Regulatory Approval
- Physical Characteristics
- 3.1 ECCN and Part Number
- 3.2 Electrical Operating Conditions
- 3.3 Environmental Operating Conditions
- 3.4 Power Supply Dimensioning
- 3.5 I/O Characteristics
- 3.6 Auxiliary ADC
- 3.7 Performance
- 3.8 Component Reliability
- 3.9 Package Description
- 3.10 Packing Information
- 3.11 Storage Conditions
- 3.12 Mounting Considerations
- Signal and Pins
- Acronyms
SIGNAL AND PINS
LTE LOW POWER MODE
GM01Q DATASHEET PROPRIETARY 30
SEQUANS Communications
Table 4-4 shows the values of the measured leakage current (measurements
taken on silicon) for the PMU bi-directional wake IOs.
Table 4-5 shows values of the external pull-up/pull-down resistor to be
used on the PMU bi-directional wake IOs pads.
Table 4-6 shows details about the PMU bi-directional wake IOs pulses
detection mechanism timings.
Table 4-4: Measured leakage current for the PMU bi-directional wake IOs.
Minimum Typical Maximum
3 nA 4 nA 12 nA
Table 4-5: External pull-up/pull-down resistor to be used on the PMU bi-directional wake
IOs Pads.
Minimum Typical Maximum
1 kOhm 10 kOhm 100 kOhm
Table 4-6: Details about the PMU bi-directional wake IOs pulses detection mechanism
timings
Maximum pulse width
that is guaranteed to be ignored
Minimum pulse width
that is guaranteed to be seen
11.1 ns 100 µs