Data Sheet
Table Of Contents
- Datasheet
- Preface
- About this Datasheet
- Product Features
- Regulatory Approval
- Physical Characteristics
- 3.1 ECCN and Part Number
- 3.2 Electrical Operating Conditions
- 3.3 Environmental Operating Conditions
- 3.4 Auxiliary ADC Specification
- 3.5 Power Supply Dimensioning
- 3.6 I/O Characteristics
- 3.7 Package Description
- 3.8 Packing Information
- 3.9 Storage Conditions
- 3.10 Mounting Considerations
- 3.11 Component Reliability
- 3.12 RF Performance
- Signals and Pins
- Acronyms
PHYSICAL CHARACTERISTICS
I/O CHARACTERISTICS
15 PROPRIETARY SP150Q DATASHEET
SEQUANS Communications
R
PD
Pull-down Resistor
52 90 167 kOhm
V
OL
Output Low Voltage
0.45 V
V
OH
Output High Voltage
1.35 V
I
OL
Low Level Output Current at V
OL
(max)
2 mA 1.2 2.2 3.6 mA
4 mA 2.3 4.3 7.1 mA
8 mA 4.6 8.6 14.3 mA
I
OH
High Level Output Current at V
OH
(max)
2 mA 1.0 2.4 4.6 mA
4 mA 2.0 4.7 9.2 mA
8 mA 4.0 9.4 18.4 mA
Table 3-5: DC Characteristics for Digital IOs, Voltage 1.8 V (Continued)
Parameter Drive Strength Min. Nom. Max. Unit
Table 3-6: DC Characteristics for Digital IOs, Voltage 1.8 V - DDR IO Pins (BIDIR_DDR
Type)
Parameter Drive Strength Min. Nom. Max. Unit
VDDQ
MOBILE DDR 1.8V I/O power
1.7 1.8 1.9 V
Input Capacitance 2.689 pF
V
IL
Input Low Voltage
-0.3 0.3 * VDDQ V
V
IH
Input High Voltage
0.7 * VDDQ VDDQ + 0.3 V
V
ILD(AC)
AC Input Low Voltage
-0.3 0.2 * VDDQ V
V
IHD(AC)
AC Input High Voltage
0.8 * VDDQ VDDQ + 0.3 V
V
OL
Output Low Voltage (I
OH
=-0.1mA)
0.1 * VDDQ V