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FSC‐BW226Datasheet
ShenzhenFeasycomTechnologyCo.,Ltd.www.feasycom.com
‐15‐
T
ST
‐ StorageTemperature ‐40 25 +85 °C
I
IO
‐ MaximumCurrentsunkbyaI/Opin 2 3 4 mA
I
IO
‐ MaximumCurrentsourcedbyaI/Opin 2 3 4 mA
IDD‐ 3.3VRatingCurrent(Withinternalregulator
andintegratedCOMSPA)(Wifionly)
‐ ‐ 450 mA
5.3Input/outputTerminalCharacteristics
Table6:DCCharacteristics(V
DD
‐V
SS
=3~3.6V,T
A
=25C)
Parameter Min Type Max Unit
V
DD
‐ OperationVoltage 3 3.3 3.6 V
V
SS
‐ PowerGround ‐0.3 ‐ ‐ V
V
DD12
‐ CoreLogicandI/OBufferPre‐DriverVoltage 1.08 1.2 1.32 V
V
OH
‐ HighLevelOutputVoltage 2.4 ‐ ‐ V
V
OL
‐ LowLevelOutputVoltage‐‐0.4 V
V
IH
‐ InputHighVoltage 2.0 ‐ ‐ V
V
IL
‐ InputLowVoltage‐‐0.8 V
V
TH
‐ SwitchThreshold(Schmitt‐falling‐trigger) 1.36 1.45 1.56 V
V
TH
‐ SwitchThreshold(Schmitt‐rising‐trigger) 1.78 1.87 1.97 V
R
PU
‐ InputPull‐upResist(V
IN
=V
SS
) 32 53 120 KΩ
R
PD
‐ InputPull‐downResist(V
IN
=V
DD
) 37 49 120 KΩ
I
L
‐ InputLeakageCurrent ‐10 ‐ 10 uA
I
OZ
‐ Tri‐StateOutputLeakageCurrent‐10‐ 10 uA
I
OL
‐ Lowlevelsinkcurrent(V
OL
=0.4V) 4 ‐ ‐ mA
I
OH
‐ Highlevelsourcecurrent(V
OH
=2.4V) 4‐ ‐mA
5.4TemperatureCharacteristics
Table7:Tempe ratureCharacteristics
Power(W) PCB(layer) Thetaja(C/W) Thetajc(C/W) Psijt(C/W)
1 4 28.1 11.1 0.24
5.5SpecificationofLowVoltageReset
Table8:SpecificationsofLowVoltageReset
Parameter Min Type Max Unit
V
DD
‐ SupplyVoltage 0‐3.6 V
T
A
‐ Temperature ‐20 25 +70 °C
I
LVR
‐ QuiescentCurrent‐25 40 uA
V
LVR
‐ ThresholdVoltage 2.16 2.4 2.64 V