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ManualsBrandsSilicon Power ManualsHardwareSMCT AC 05N14_N-MOS VCS, Bare-Die
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Description
Size - 2
Gate return
Gate Bond Area
Features Anode Bond Area
Schematic Symbol
Applications
Cathode Bond Area
This voltage controlled Solidtron
TM
(VCS) discharge switch
utilizes an n-type MOS-Controlled Thyristor.
The VCS features the high peak current capability and low On-
state voltage drop common to SCR thyristors combined with
extremely high dI/dt capability. This semiconductor is intended
for the control of high power circuits with the use of very small
amounts of input energy and is ideally suited for capacitor
discharge applications.
All bond areas are metallized with solderable metal surfaces
providing the user with a solderable device. It's small size and
low profile make it extremely attractive to high dI/dt applications
where stray series inductance must be kept to a minimum.
1400V Peak Off-State Voltage
2.0kA Repetitive Peak Anode Current
>50kA/uSec dI/dt Capability
50nSec Turn-On Delay
Low Loss
MOS Gate Control
Anode (A)
SMCTAC05N14A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
fax: 610-407-3688
Solidtron
TM
N-MOS VCS, Bare-Die
Data Sheet (Rev 1 - 03/30/09)
Applications
ESA / EFI
Limiting Characteristics and Ratings
SYMBOL VALUE UNITS
Peak Off-State Voltage
V
DRM
1400 V
Peak Reverse Voltage
V
RRM
-5 V
Off-State Rate of Change of Voltage Immunity (V
D
=1400V)
dv/dt
5000 V/uSec
Non-repetitive Peak Anode Current (Sinusoid Pulse Duration=250nSec)
I
ASM
2000 A
Repetitive Peak Anode Current (Sinusoid Pulse Duration=250nSec)
I
ASM
1800 A
Rate of Change of Current
dI/dt
50 kA/uSec
Continuous Gate-Cathode Voltage
V
GKS
+/-15 V
Peak Gate-Cathode Voltage
V
GKM
+/-18 V
Minimum Negative Gate-Cathode Voltage Required for Guaranteed Off-State
V
GK(OFF-MIN)
-5 V
Maximum Junction Temperature
T
JM
125
o
C
Maximum Soldering Temperature (Installation) 260
o
C
CAO 05/28/09
This SILICON POWER product is protected by one or more of the following U.S. Patents:
5,446,316
5,557,656
5,564,226
5,517,058
4,814,283
5,135,890
5,521,436
5,585,310
5,248,901
5,366,932
5,497,013
5,532,635
5,105,536
5,777,346
5,446,316
5,577,656
5,473,193
5,166,773
5,209,390
5,139,972
5,103,290
5,028,987
5,304,847
5,569,957
4,958,211
5,111,268
5,260,590
5,350,935
5,640,300
5,184,206
5,206,186
5,757,036
5,777,346
5,995,349
4,801,985
4,476,671
4,857,983
4,888,627
4,912,541
5,424,563
5,399,892
5,468,668
5,082,795
4,980,741
4,941,026
4,927,772
4,739,387
4,648,174
4,644,637
4,374,389
4,750,666
4,429,011
5,293,070
Gate (G)
Cathode (K)
Gate Return (GR)
CAO 05/28/09

Summary of content (5 pages)