User's Manual

SIM7600G-H User manual
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Table 13: USIM electronic characteristic 3.0V mode (USIM_VDD=2.95V)
Symbol
Parameter
Min.
Typ.
Max.
Unit
USIM_V
DD
LDO power output voltage
2.75
2.95
3.05
V
V
IH
High-level input voltage
0.65*USIM_VDD
-
USIM_VDD +0.3
V
V
IL
Low-level input voltage
-0.3
0
0.25*USIM_VDD
V
V
OH
High-level output voltage
USIM_VDD -0.45
-
USIM_VDD
V
V
OL
Low-level output voltage
0
0
0.45
V
3.7.1 USIM Application Guide
It is recommended to use an ESD protection component such as ESDA6V1W5 produced by ST
(www.st.com ) or SMF15C produced by ON SEMI (www.onsemi.com ). Note that the USIM peripheral circuit
should be close to the USIM card socket. The following figure shows the 6-pin SIM card holder reference
circuit.
Figure 22: USIM interface reference circuit
USIM_DATA has been pulled up with a 10KΩ resistor to USIM_VDD in MODULE. A 100nF capacitor on
USIM_VDD is used to reduce interference. For more details of AT commands about USIM, please refer
to document [1].USIM_CLK is very important signal, the rise time and fall time of USIM_CLK should be
less than 40ns, otherwise the USIM card might not be initialized correctly.
The USIM_DET pin is used for detection of the USIM card hot plug in. User can select the 8-pin USIM card
holder to implement USIM card detection function.
The following figure shows the 8-pin SIM card holder reference circuit.
NOTE