Specifications

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SIM5800_Hardware Design_V1.01 50 2018-10-08
6.8 Electro-Static Discharge
Electrostatic discharge (ESD) occurs naturally in laboratory and factory environments. An established
high-voltage potential is always at risk of discharging to a lower potential. If this discharge path is through a
semiconductor device, it may result in destructive damage.
SIM5800 must be handled according to the ESD Association standard: ANSI/ESD S20.20-1999, Protection of
Electrical and Electronic Parts, Assemblies, and Equipment.
Table 34: ESD performance parameters（Temperature: 25℃, Humidity: 45%）
Pin
Contact discharge
Air discharge
VBAT
TBD
TBD
GND
TBD
TBD
天线接口
TBD
TBD
PWRKEY
TBD
TBD
6.9 Module Operating Frequencies
Table 35: Module operating frequencies
Frequency
Receive
Transmit
Physical channel
GSM850
869-8954MHz
824-869MHz
128-151
EGSM900
925-960MHz
880-915MHz
0-124, 975-1023
DCS1800
1805-1880MHz
1710-1785MHz
512-885
PCS1900
925-960MHz
880-915MHz
512-810
WCDMA B1
2110-2170 MHz
1920-1980 MHz
TX: 9612-9888
RX: 10562-10838
WCDMA B2
1930~1990MHz
1850~1910MHz
TX: 9262-9538
RX: 9662-9938
WCDMA B5
824~ 849MHz
869~ 894MHz
TX: 4132-4233
RX: 4357-4458
WCDMA B8
925-960MHz
880-915 MHz
TX: 2712-2863
RX: 2937-3088
6.10 RF Characteristics
Table 36: Conducted transmission power
Band
Power
Min