Datasheet

Vybrid Power Consumption and Options, Rev. 0
12 Freescale Semiconductor
Powering options
The core power is:
Total power on LDO with external ballast transistor is:
The power efficiency in this case is:
Such low power efficiency is due to the voltage drop on the transistor:
as compared to 1.2V on the core. Moreover, the efficiency of the 3.3V DC/DC converter and 1.5V LDO
are not included.
This solution is suitable when:
• a simple application with low current requirements is used;
• SDRAM is not used;
• simplicity is preferred;
• the thermal power loss on ballast transistor and the size of the transistor package in not an issue.
This solution is recommended especially for simple baremetal and test applications.
8.4 External ballast transistor powered from VSDRAM
The ballast transistor can be powered from a lower voltage level than 3.3V. This power option significantly
increases power efficiency.