Datasheet

ManualsBrandsST ManualsDiodesSchottky Diode, 100mA, 30V, SOT-23

1/5

Table 1: Main Product Characteristics

F(AV)

0.1 A

RRM

30 V

150°C

(max) 0.33 and 0.40 V

BAR42FILM

BAR43FILM

SMALL SIGNAL SCHOTTKY DIODE

REV. 3

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit

RRM

Repetitive peak reverse voltage 30 V

F(AV)

Continuous forward current 0.1 A

FSM

Surge non repetitive forward current t

= 10ms sinusoidal 0.75 A

tot

Power dissipation (note 1) T

amb

= 25°C 250 mW

stg

Maximum storage temperature range -65 to + 150 °C

Maximum operating junction temperature * 150 °C

Maximum temperature for soldering during 10s 260 °C

Note 1: for double diodes, P

tot

is the total dissipation of both diodes.

* : thermal runaway condition for a diode on its own heatsink

dPtot

dTj

---------------

Rth j a

–()

-------------------------->

BAR42FILM

BAR43FILM

BAR43CFILM

BAR43AFILM

BAR43ASFILM

SOT23-3L

April 2005

FEATURES AND BENEFITS

■ Very small conduction losses

■ Negligible switching losses

■ Low forward voltage drop

■ Surface mount device

DESCRIPTION

Genral purpose metal to silicon diodes featuring

very low turn-on voltage and fast switching.

Table 2: Order Codes

Part Number Marking

BAR42FILM D94

BAR43FILM D95

BAR43AFILM DB1

BAR43CFILM DB2

BAR43SFILM DA5

Summary of content (5 pages)

PAGE 1
BAR42FILM BAR43FILM ® SMALL SIGNAL SCHOTTKY DIODE Table 1: Main Product Characteristics IF(AV) 0.1 A VRRM 30 V Tj 150°C VF(max) 0.33 and 0.
PAGE 2
BAR42FILM / BAR43FILM Table 4: Thermal Resistance Symbol Rth(j-a) Parameter Junction to ambient (*) Value Unit 500 °C/W (*) Mounted on epoxy board with recommended pad layout. Table 5: Static Electrical Characteristics Symbol Parameter Tests conditions VBR Breakdown voltage IR * Reverse leakage current Tj = 25°C IR = 100µA Tj = 25°C Tj = 100°C Tj = 25°C Forward voltage drop Typ Max. V ALL 500 nA 100 µA IF = 10mA 0.35 0.40 IF = 50mA 0.50 0.
PAGE 3
BAR42FILM / BAR43FILM Figure 3: Reverse leakage current versus reverse voltage applied (typical values) Figure 4: Reverse leakage current versus junction temperature IR(µA) IR(µA) 1E+2 1E+4 Tj=100°C VR=30V 1E+3 1E+1 1E+2 1E+0 1E+1 Tj=50°C 1E+0 1E-1 Tj=25°C 1E-1 VR(V) VR(V) 1E-2 0 5 10 1E-2 15 20 25 0 30 Figure 5: Junction capacitance versus reverse voltage applied (typical values) 25 50 75 100 125 150 Figure 6: Relative variation of thermal impedance junction to ambient ver
PAGE 4
BAR42FILM / BAR43FILM Figure 8: SOT23-3L Package Mechanical Data DIMENSIONS Millimeters Inches Min. Max. Min. Max. 0.89 1.4 0.035 0.055 0 0.1 0 0.004 0.3 0.51 0.012 0.02 0.085 0.18 0.003 0.007 2.75 3.04 0.108 0.12 0.85 1.05 0.033 0.041 1.7 2.1 0.067 0.083 1.2 1.6 0.047 0.063 2.1 2.75 0.083 0.108 0.6 typ. 0.024 typ. 0.35 0.65 0.014 0.026 A REF. E e B D e1 S A1 L c H A A1 B c D e e1 E H L S Figure 9: Foot Print Dimensions (in millimeters) 0.95 0.61 1.26 0.73 3.
PAGE 5
BAR42FILM / BAR43FILM Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice.