Datasheet

BDW93C
BDW94B/BDW94C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
■
COMPLEMENTARY PNP - NPN DEVICES
■
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93C is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
The complementary PNP type is BDW94C.
Also BDW94B is a PNP type.
®
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW93C
PNP BDW94B BDW94C
V
CBO
Collector-Base Voltage (I
E
= 0) 80 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 100 V
I
C
Collector Current 12 A
I
CM
Collector Peak Current 15 A
I
B
Base Current 0.2 A
P
tot
Total Dissipation at T
c
≤ 25
o
C
80 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
R
1
Typ. = 10 K
Ω
R
2
Typ. = 150
Ω
1/6