Datasheet

BDW93CFP
BDW94CFP
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■ STMicroelectronics PREFERRED
SALESTYPES
■ MONOLITHIC DARLINGTON
CONFIGURATION
■ COMPLEMENTARY PNP - NPN DEVICES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
■ FULLY MOLDED INSULATED PACKAGE
■ 2000 V DC INSULATION (U.L. COMPLIANT)
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93CFP is a silicon Epitaxial-Base NPN
transistor in monolithic Darlington configuration
mounted in TO-220FP fully molded insulated
package. It is intented for use in power linear
and switching applications.
The complementary PNP type is the BDW94CFP.
INTERNAL SCHEMATIC DIAGRAM
September 2001
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW93CFP
PNP BDW94CFP
V
CBO
Collector-Base Voltage (I
E
= 0) 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 100 V
I
C
Collector Current 12 A
I
CM
Collector Peak Current 15 A
I
B
Base Current 0.2 A
P
tot
Total Dissipation at T
c
≤ 25
o
C
33 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
R
1
Typ. = 10 KΩ R
2
Typ. = 150 Ω
1
2
3
T0-220FP
®
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