Datasheet

BDX33B BDX33C
BDX34B BDX34C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
DESCRIPTION
The BDX33B and BDX33C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in power linear and switching applications.
The complementary PNP types are BDX34B and
BDX34C respectively.
®
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Unit
NPN BDX33B BDX33C
PNP BDX34B BDX34C
V
CBO
Collector-Base Voltage (I
E
= 0) 80 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 100 V
I
C
Collector Current 10 A
I
CM
Collector Peak Current 15 A
I
B
Base Current 0.25 A
P
tot
Total Dissipation at T
c
≤ 25
o
C
70 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
R
1
Typ. = 10 K
Ω
R
2
Typ. = 150
Ω
1/4