Datasheet

BTA06 and BTB06 Series
2/7
Tables 4: Electrical Characteristics (T
j
= 25°C, unless otherwise specified)
■ SNUBBERLESS and Logic Level (3 quadrants)
■ Standard (4 quadrants)
Table 5: Static Characteristics
Symbol Test Conditions Quadrant
BTA06 / BTB06
Unit
TW SW CW BW
I
GT
(1)
V
D
= 12 V R
L
= 30 Ω
I - II - III MAX. 5 10 35 50 mA
V
GT
I - II - III MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125°C
I - II - III MIN. 0.2 V
I
H
(2) I
T
= 100 mA
MAX. 10 15 35 50 mA
I
L
I
G
= 1.2 I
GT
I - III
MAX.
10 25 50 70
mA
II 15 30 60 80
dV/dt (2)
V
D
= 67 %V
DRM
gate open T
j
= 125°C
MIN. 20 40 400 1000 V/µs
(dI/dt)c (2)
(dV/dt)c = 0.1 V/µs T
j
= 125°C
MIN.
2.7 3.5 - -
A/ms
(dV/dt)c = 10 V/µs T
j
= 125°C
1.2 2.4 - -
Without snubber T
j
= 125°C
--3.55.3
Symbol Test Conditions Quadrant
BTA06 / BTB06
Unit
CB
I
GT
(1)
V
D
= 12 V R
L
= 30 Ω
I - II - III
IV
MAX.
25
50
50
100
mA
V
GT
ALL MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125°C
ALL MIN. 0.2 V
I
H
(2) I
T
= 500 mA
MAX. 25 50 mA
I
L
I
G
= 1.2 I
GT
I - III - IV
MAX.
40 50
mA
II 80 100
dV/dt (2)
V
D
= 67 %V
DRM
gate open T
j
= 125°C
MIN. 200 400 V/µs
(dV/dt)c (2)
(dI/dt)c = 2.7 A/ms T
j
= 125°C
MIN. 5 10 V/µs
Symbol Test Conditions Value Unit
V
TM
(2) I
TM
= 8.5 A t
p
= 380 µs T
j
= 25°C
MAX. 1.55 V
V
t0
(2)
Threshold voltage
T
j
= 125°C
MAX. 0.85 V
R
d
(2)
Dynamic resistance
T
j
= 125°C
MAX. 60 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25°C
MAX.
5µA
T
j
= 125°C
1mA
Note 1: minimum I
GT
is guaranted at 5% of I
GT
max.
Note 2: for both polarities of A2 referenced to A1.