Datasheet

BUL216
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■ STMicroelectronics PREFERRED
SALESTYPE
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ VERY HIGH SWITCHING SPEED
■ HIGH OPERATING JUNCTION
TEMPERATURE
■ HIGH RUGGEDNESS
APPLICATIONS
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL216 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
June 2001
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 1600 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 800 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 9 V
I
C
Collector Current 4 A
I
CM
Collector Peak Current (t
p
< 5 ms) 6 A
I
B
Base Current 2 A
I
BM
Base Peak Current (t
p
< 5 ms) 4 A
P
tot
Total Dissipation at T
c
= 25
o
C90W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220
®
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