Datasheet

November 2017
DocID029022 Rev 3
1/14
This is information on a product in full production.
www.st.com
FERD20H100S
100 V field-effect rectifier diode
Datasheet - production data
Features
 ST advanced rectifier process
 Stable leakage current over reverse voltage
 Reduced leakage current
 Low forward voltage drop
 High frequency operation
 Insulated package TO-220FPAB:
 Insulated voltage: 2000 V
RMS
sine
 ECOPACK
®
2 compliant component
Description
The device is based on a proprietary technology
that achieves the best in class V
F
/I
R
trade-off for a
given silicon surface. This 100 V rectifier has
been optimized for use in confined casing
applications where both efficiency and thermal
performance matter. With a lower dependency of
leakage current (I
R
) and forward voltage (V
F
) in
function of temperature, the thermal runaway risk
is reduced. Therefore, it can advantageously
replace 100 V Schottky diodes.
Table 1: Device summary
Symbol
Value
I
F(AV)
20 A
V
RRM
100 V
V
F
(max.)
0.415 V
I
R
(max.)
140 µA
T
j
(max.)
175 °C
TO-220AB
TO-220FPAB
DPAK
IPAK
A
K
A
A
K
A
K
K
K
A
A
A
K
A
K
K
A
A
A
A