Datasheet

THERMAL DATA
Symbol Parameter
Value
Unit
L6201 L6201P L6202 L6203
Rt
h j-pins
Rt
h j-case
Rt
h j-amb
Thermal Resistance Junction-pins max
Thermal Resistance Junction Case max.
Thermal Resistance Junction-ambient max.
15
–
85
–
–
13 (*)
12
–
60
–
3
35
°C/W
(*) Mounted on aluminium substrate.
ELECTRICAL CHARACTERISTICS (Refer to the Test Circuits; T
j
=25°C, V
S
= 42V, V
sens
= 0, unless
otherwise specified).
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
s
Supply Voltage 12 36 48 V
V
ref
Reference Voltage I
REF
= 2mA 13.5 V
I
REF
Output Current 2mA
I
s
Quiescent Supply Current EN = H V
IN
=L
EN = H V
IN
=H
EN = L ( Fig. 1,2,3)
I
L
=0
10
10
8
15
15
15
mA
mA
mA
f
c
Commutation Frequency (*) 30 100 KHz
T
j
Thermal Shutdown 150
°
C
T
d
Dead Time Protection 100 ns
TRANSISTORS
OFF
I
DSS
Leakage Current Fig. 11 V
s
=52V 1 mA
ON
R
DS
On Resistance Fig. 4,5 0.3 0.55 Ω
V
DS(ON)
Drain Source Voltage Fig. 9
I
DS
=1A
I
DS
= 1.2A
I
DS
=3A
L6201
L6202
L6201P/03
0.3
0.36
0.9
V
V
V
V
sens
Sensing Voltage – 1 4 V
SOURCE DRAIN DIODE
V
sd
Forward ON Voltage Fig. 6a and b
I
SD
=1A
L6201
EN = L
I
SD
= 1.2A L6202 EN = L
I
SD
=3A
L6201P/03
EN = L
0.9 (**)
0.9 (**)
1.35(**)
V
V
V
t
rr
Reverse Recovery Time
dif
dt
=25A/µs
I
F
=1A
I
F
= 1.2A
I
F
=3A
L6201
L6202
L6203
300 ns
t
fr
Forward Recovery Time 200 ns
LOGIC LEVELS
V
IN L
,V
EN L
Input Low Voltage – 0.3 0.8 V
V
IN H
,V
EN H
Input High Voltage 2 7 V
I
IN L
,I
EN L
Input Low Current V
IN
,V
EN
= L –10 µA
I
IN H
,I
EN H
Input High Current V
IN
,V
EN
=H 30
µ
A
L6201 - L6201P - L6202 - L6203
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