Datasheet

M48T35, M48T35Y Maximum ratings
Doc ID 2611 Rev 10 17/28
4 Maximum ratings
Stressing the device above the rating listed in the absolute maximum ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 6. Absolute maximum ratings
Caution: Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup
mode.
Caution: Do NOT wave solder SOIC to avoid damaging SNAPHAT
®
sockets.
Symbol Parameter Value Unit
T
A
Ambient operating temperature
Grade 1 0 to 70 °C
Grade 6 –40 to 85 °C
T
STG
Storage temperature (V
CC
off, oscillator off) –40 to 85 °C
T
SLD
(1)(2)(3)
1. For DIP package, soldering temperature of the IC leads is to not exceed 260 °C for 10 seconds.
Furthermore, the devices shall not be exposed to IR reflow nor preheat cycles (as performed as part of
wave soldering). ST recommends the devices be hand-soldered or placed in sockets to avoid heat damage
to the batteries.
2. For DIP packaged devices, ultrasonic vibrations should not be used for post-solder cleaning to avoid
damaging the crystal.
3. For SOH28 package, lead-free (Pb-free) lead finish: reflow at peak temperature of 260 °C (the time above
255 °C must not exceed 30 seconds).
Lead solder temperature for 10 seconds 260 °C
V
IO
Input or output voltages
M48T35 –0.3 to 7 V
M48T35Y –0.3 to 7 V
V
CC
Supply voltage
M48T35 –0.3 to 7 V
M48T35Y –0.3 to 7 V
I
O
Output current 20 mA
P
D
Power dissipation 1 W