Datasheet

1/11April 2005
STD20NF06L
N-CHANNEL 60V - 0.032 Ω - 24A DPAK/IPAK
STripFET™ II POWER MOSFET
Rev. 2
Figure 1:PackageTable 1: General Features
■ TYPICAL R
DS
(on) = 0.032 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
CHARACTERIZATION
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ POWER TOOLS
■ AUTOMOTIVE ENVIRONMENT
TYPE
V
DSS
R
DS(on)
I
D
STD20NF06L
STD20NF06L-1
60 V
60 V
< 0.040 Ω
< 0.040 Ω
24 A
24 A
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
Figure 2: Internal Schematic Diagram
Table 2: Ordering Information
Table 3:ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area.
SALES TYPE MARKING PACKAGE PACKAGING
STD20NF06L D20NF06L TO-252 TAPE & REEL
STD20NF06L-1 D20NF06L TO-251 TUBE
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60 V
V
DGR
Drain-gate Voltage (R
GS
= 20 kΩ)
60 V
V
GS
Gate- source Voltage ± 18 V
I
D
Drain Current (continuous) at T
C
= 25°C
24 A
I
D
Drain Current (continuous) at T
C
= 100°C
17 A
I
DM
(•)
Drain Current (pulsed) 96 A
P
tot
Total Dissipation at T
C
= 25°C
60 W
Derating Factor 0.4 W/°C
dv/dt
(1)
Peak Diode Recovery voltage slope 10 V/ns
E
AS
(2)
Single Pulse Avalanche Energy 225 mJ
T
stg
Storage Temperature
-55 to 175 °C
T
j
Operating Junction Temperature