STGW39NC60VD 40 A - 600 V - very fast IGBT Features ■ Low CRES / CIES ratio (no cross conduction susceptibility) ■ IGBT co-packaged with ultra fast free-wheeling diode Applications ■ High frequency inverters ■ UPS ■ Motor drivers ■ Induction heating 2 1 TO-247 Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. 3 Figure 1.
Contents STGW39NC60VD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 2.2 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
STGW39NC60VD 1 Electrical ratings Electrical ratings Table 2.
Electrical characteristics 2 STGW39NC60VD Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions V(BR)CES Collector-emitter breakdown IC = 1 mA voltage (VGE = 0) VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 30 A, VGE(th) Gate threshold voltage VCE= VGE, IC=1 mA ICES Collector cut-off current (VGE = 0) VCE = 600 V IGES gfs (1) Min. Typ. Max. Unit 600 VGE = 15 V, IC = 30 A V 1.8 1.7 2.4 V V 5.
STGW39NC60VD Table 6. Symbol td(on) tr (di/dt)onf td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 7. Symbol Electrical characteristics Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions Min.
Electrical characteristics Table 8. Symbol Collector-emitter diode Parameter VF Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current Qrr Irrm trr Qrr Irrm 6/15 STGW39NC60VD Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions IF = 30 A IF = 30 A, TC = 125 °C IF = 30 A, VR = 50 V, di/dt =100 A/µs (see Figure 21) IF = 30 A, VR = 50 V, TC= 125 °C, di/dt =100 A/µs (see Figure 21) Min. Typ. Max. Unit 2.4 1.8 V V 45 56 2.
STGW39NC60VD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Collector-emitter on voltage vs collector current Figure 7.
Electrical characteristics Figure 8. Normalized breakdown voltage vs temperature Figure 10. Capacitance variations STGW39NC60VD Figure 9. Gate charge vs gate-emitter voltage Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13.
STGW39NC60VD Electrical characteristics Figure 14. Thermal impedance Figure 15. Turn-off SOA Figure 16. Emitter-collector diode characteristics Figure 17. IC vs. frequency IFM(A) 120 110 Tj=125°C (Maximum values) 100 90 80 Tj=125°C (Typical values) 70 60 Tj=25°C (Maximum values) 50 40 30 20 10 VFM(V) 0 0 2.2 1 2 3 4 5 6 Frequency applications For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported.
Electrical characteristics STGW39NC60VD Equation 2 PC = IC * VCE(SAT) * δ with 50% of duty cycle, VCESAT typical value @125 °C. ● Power dissipation during ON & OFF commutations is due to the switching frequency: Equation 3 PSW = (EON + EOFF) * freq.Typical values @ 125 °C for switching losses are used (test conditions: VCE = 390 V, VGE = 15 V, RG = 10 Ω).
STGW39NC60VD 3 Test circuit Test circuit Figure 18. Test circuit for inductive load switching Figure 19. Gate charge test circuit Figure 20. Switching waveforms Figure 21.
Package mechanical data 4 STGW39NC60VD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
STGW39NC60VD Package mechanical data TO-247 mechanical data mm. Dim. A Min. 4.85 Typ Max . 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 5.
Revision history 5 STGW39NC60VD Revision history Table 9. 14/15 Document revision history Date Revision Changes 17-Nov-2005 1 First release 05-May-2006 2 Inserted curves 10-Jul-2006 3 Modified value on Absolute maximum ratings 01-Dec-2006 4 Modified value on Dynamic 16-May-2007 5 New curves updated:Figure 5 and Figure 6 22-Aug-2007 6 Added new Figure 17 and new section 2.
STGW39NC60VD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.
