Datasheet

Electrical parameters STM8L051F3
86/96 DS9178 Rev 4
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm IEC61967-2 which specifies the board and the loading of each pin.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and charge device model. This test conforms to the
JESD22-A114A/A115A standard.
Table 48. EMS data
Symbol Parameter Conditions
Level/
Class
V
FESD
Voltage limits to be applied on
any I/O pin to induce a functional
disturbance
V
DD
= 3.3 V, T
A
= +25 °C,
f
CPU
= 16 MHz,
conforms to IEC 61000
3B
V
EFTB
Fast transient voltage burst limits
to be applied through 100 pF on
V
DD
and V
SS
pins to induce a
functional disturbance
V
DD
= 3.3 V, T
A
= +25 °C,
f
CPU
= 16 MHz,
conforms to IEC 61000
Using HSI
4A
Using HSE
2B
Table 49. EMI data
(1)
1. Not tested in production.
Symbol Parameter Conditions
Monitored
frequency band
Max vs.
Unit
16 MHz
S
EMI
Peak level
V
DD
= 3.6 V,
T
A
= +25 °C,
LQFP32
conforming to
IEC61967-2
0.1 MHz to 30 MHz -3
dBμV30 MHz to 130 MHz 9
130 MHz to 1 GHz 4
SAE EMI Level 2 -
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