Datasheet

1/9May 2004
.
STP16NF06
STP16NF06FP
N-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FP
STripFET™ II POWER MOSFET
■ TYPICAL R
DS
(on) = 0.08Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE AT 100
o
C
■ APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
TYPE
V
DSS
R
DS(on)
I
D
STP16NF06
STP16NF06FP
60 V
60 V
<0.1 Ω
<0.1 Ω
16 A
11 A
1
2
3
1
2
3
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area.
(*) Current Limited by package’s thermal resistance
(1) I
SD
≤ 16A, di/dt ≤ 200A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 8A, V
DD
= 30V
Symbol Parameter Value Unit
STP16NF06 STP16NF06FP
V
DS
Drain-source Voltage (V
GS
= 0)
60 V
V
GS
Gate- source Voltage ± 20 V
I
D
Drain Current (continuous) at T
C
= 25°C
16 11(*) A
I
D
Drain Current (continuous) at T
C
= 100°C
11 7.5(*) A
I
DM
(•)
Drain Current (pulsed) 64 44(*) A
P
tot
Total Dissipation at T
C
= 25°C
45 25 W
Derating Factor 0.3 0.17 W/°C
dv/dt
(1)
Peak Diode Recovery voltage slope 20 V/ns
E
AS
(2)
Single Pulse Avalanche Energy 130 mJ
I
AR
Avalanche Current, Repetitive or Not-Repetitive 16 A
V
ISO
Insulation Withstand Voltage (DC) -------- 2500 V
T
stg
Storage Temperature
-55 to 175 °C
T
j
Operating Junction Temperature