Datasheet

ManualsBrandsST ManualsDiscrete SemiconductorsMOSFET, N-Channel, 100V, 26A, 85W, TO-220AB

August 2006 Rev 7 1/14

STB24NF10

STP24NF10

N-channel 100V - 0.0055Ω - 26A - TO-220 - D²PAK

Low gate charge STripFET™ II Power MOSFET

General features

■ Exceptional dv/dt capability

■ 100% avalanche tested

■ Application oriented characterization

Description

This Power MOSFET series realized with

STMicroelectronics unique STripFET™ process

has specifically been designed to minimize the

on-resistance. It is therefore suitable as primary

switch in advanced high-efficiency,high-frequency

isolated DC-DC converters for Telecom and

Computer application. It is also intended for any

applications with low gate drive requirements.

Applications

■ Switching application

Internal schematic diagram

Type V

DSS

DS(on)

STB24NF10

STP24NF10

100V

<0.060Ω

26A

TO-220

D²PAK

www.st.com

Order codes

Part number Marking Package Packaging

STP24NF10 P24NF10 TO-220 Tube

STB24NF10 B24NF10 D²PAK Tape & reel

Summary of content (14 pages)

PAGE 1
STB24NF10 STP24NF10 N-channel 100V - 0.0055Ω - 26A - TO-220 - D²PAK Low gate charge STripFET™ II Power MOSFET General features ■ Type VDSS RDS(on) ID STB24NF10 STP24NF10 100V 100V <0.060Ω <0.060Ω 26A 26A Exceptional dv/dt capability 3 3 1 ■ 100% avalanche tested ■ Application oriented characterization D²PAK 1 2 TO-220 Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance.
PAGE 2
Contents STB24NF10 - STP24NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . .
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STB24NF10 - STP24NF10 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VDGR Drai-gate voltage (RGS=20kΩ) 100 V Gate-source voltage ± 20 V VGS ID Drain current (continuous) at TC = 25°C 26 A ID Drain current (continuous) at TC=100°C 18 A Drain current (pulsed) 104 A Total dissipation at TC = 25°C 85 W 0.
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Electrical characteristics 2 STB24NF10 - STP24NF10 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 12A Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Typ. Max.
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STB24NF10 - STP24NF10 Table 6. Symbol Electrical characteristics Source drain diode Max Unit Source-drain current 26 A ISDM(1) Source-drain current (pulsed) 104 A VSD(2) Forward on voltage 1.5 V ISD trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min Typ. ISD= 24A, VGS=0 ISD= 24A, di/dt = 100A/µs, VDD= 30V, Tj=150°C (see Figure 14) 100 375 7.5 ns nC A 1. Pulse width limited by safe operating area 2.
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Electrical characteristics STB24NF10 - STP24NF10 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Trasconductance Figure 6.
PAGE 7
STB24NF10 - STP24NF10 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11.
PAGE 8
Test circuit 3 STB24NF10 - STP24NF10 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/14 Figure 17.
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STB24NF10 - STP24NF10 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
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Package mechanical data STB24NF10 - STP24NF10 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.
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STB24NF10 - STP24NF10 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.
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Packaging mechanical data 5 STB24NF10 - STP24NF10 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.
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STB24NF10 - STP24NF10 6 Revision history Revision history Table 7.
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STB24NF10 - STP24NF10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.