Datasheet

ManualsBrandsST ManualsDiscrete SemiconductorsMOSFET, N-Channel, 800V, 4.3A, 30W, TO-220FP

August 2006 Rev 4 1/15

STP5NK80Z

STP5NK80ZFP

N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP

Zener-protected SuperMESH™ Power MOSFET

General features

■ 100% avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatibility

Description

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt

capability for the most demanding applications.

Such series complements ST full range of high

voltage MOSFETs including revolutionary

MDmesh™ products.

Applications

■ Switching application

Internal schematic diagram

Type

DSS

(@Tjmax)

DS(on)

STP5NK80Z 800 V < 2.4 Ω 4.3 A

STP5NK80ZFP 800 V < 2.4 Ω 4.3 A

TO-220FPTO-220

www.st.com

Order codes

Part number Marking Package Packaging

STP5NK80Z P5NK80Z TO-220 Tube

STP5NK80ZFP P5NK80ZFP TO-220FP Tube

Summary of content (15 pages)

PAGE 1
STP5NK80Z STP5NK80ZFP N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH™ Power MOSFET General features Type VDSS (@Tjmax) STP5NK80Z STP5NK80ZFP RDS(on) ID 800 V < 2.4 Ω 4.3 A 800 V < 2.4 Ω 4.
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Contents STP5NK80Z - STP5NK80ZFP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . .
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STP5NK80Z - STP5NK80ZFP 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value TO-220 Unit TO-220FP VDS Drain-source voltage (VGS = 0) 800 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 4.3 4.3 (1) A ID Drain current (continuous) at TC=100°C 2.7 2.7 (1) A IDM(2) Drain current (pulsed) 17.2 17.2 (1) A PTOT Total dissipation at TC = 25°C 110 30 W Derating factor 0.88 0.
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Electrical ratings Table 3. STP5NK80Z - STP5NK80ZFP Avalanche characteristics Symbol Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 4.3 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 190 mJ Table 4. Symbol BVGSO 1.1 Parameter Gate-source zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1mA (Open Drain) Min. Typ. 30 Max.
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STP5NK80Z - STP5NK80ZFP 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, Tc = 125°C IGSS Gate body leakage current VGS = ± 20V (VGS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS = VGS, ID = 100µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 2.
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Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Min Typ. Max Unit Source-drain current 4.3 A Source-drain current (pulsed) 17.2 A (2) Forward on voltage ISD= 4.3 A, VGS=0 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 4.3 A, di/dt = 100A/µs, VDD=40 V, Tj = 150°C (see Figure 20) trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.
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STP5NK80Z - STP5NK80ZFP Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP (HV11720) Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6.
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Electrical characteristics STP5NK80Z - STP5NK80ZFP Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature 8/15 Figure 8. Static drain-source on resistance Figure 12.
PAGE 9
STP5NK80Z - STP5NK80ZFP Figure 13. Source-drain diode forward characteristics Electrical characteristics Figure 14. Normalized BVdss vs temperature Figure 15.
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Test circuit 3 STP5NK80Z - STP5NK80ZFP Test circuit Figure 16. Unclamped Inductive load test circuit Figure 17. Unclamped Inductive waveform Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20.
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STP5NK80Z - STP5NK80ZFP 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
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Package mechanical data STP5NK80Z - STP5NK80ZFP TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.
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STP5NK80Z - STP5NK80ZFP Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.
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Revision history 5 STP5NK80Z - STP5NK80ZFP Revision history Table 8.
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STP5NK80Z - STP5NK80ZFP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.