Datasheet

ManualsBrandsST ManualsDiodesSchottky Diode, 120A, 45V, ISOTOP

STPS12045TV



June 1999 - Ed: 3A

POWER SCHOTTKY RECTIFIER

F(AV)

2 x 60 A

RRM

45 V

Tj (max) 150 °C

(max) 0.67 V

MAIN PRODUCT CHARACTERISTICS

VERY SMALLCONDUCTION LOSSES

NEGLIGIBLESWITCHING LOSSES

EXTREMELYFAST SWITCHING

LOW THERMAL RESISTANCE

INSULATEDPACKAGE:

Insulatingvoltage = 2500 V

(RMS)

Capacitance= 45 pF

FEATURES AND BENEFITS

Dual power Schottky rectifier suited for Switched

Mode Power Supplies and high frequency DC to

DC converters.

Packaged in ISOTOP, this device is especially in-

tended for use in low voltage, high frequency in-

verters, free wheeling and polarity protection

applications.

DESCRIPTION

ISOTOP

A1K1

A2K2

Symbol Parameter Value Unit

RRM

Repetitivepeak reversevoltage 45 V

F(RMS)

RMS forward current 125 A

F(AV)

Averageforward current Tc = 95°C

δ = 0.5

Per diode

Per device

120

FSM

Surge non repetitiveforward current tp = 10 ms Sinusoidal 900 A

RRM

Repetitivepeak reversecurrent tp = 2 µs squareF = 1kHz

RSM

Non repetitive peak reverse current tp = 100µs square

stg

Storage temperaturerange

- 55 to + 150 °C

Maximum operating junctiontemperature *

150 °C

dV/dt

Critical rate of rise of reverse voltage

10000 V/µs

ABSOLUTE RATINGS

(limiting values) per diode

ISOTOP is a registered trademark of STMicroelectronics

dPtot

dTj

Rth

(

−

)

thermal runawayconditionfor a diode on its own heatsink

1/4

Summary of content (4 pages)

PAGE 1
STPS12045TV  POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 60 A VRRM Tj (max) 45 V 150 °C VF (max) 0.67 V K2 A2 K1 A1 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE INSULATED PACKAGE: Insulating voltage = 2500 V(RMS) Capacitance = 45 pF ISOTOPTM DESCRIPTION Dual power Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters.
PAGE 2
STPS12045TV THERMAL RESISTANCES Symbol Parameter Junction to case Rth (j-c) Per diode Rth (c) Value Unit 1 °C/W Total 0.55 Coupling 0.1 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode) x Rth(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions IR * Reverse leakage current Tj = 25°C Min. Typ. Forward voltage drop Tj = 25°C Unit 1 mA VR = VRRM Tj = 125°C VF * Max. 43 150 0.87 0.
PAGE 3
STPS12045TV Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig.4 : Relative variation of thermal transient impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) IM(A) 1.0 400 350 0.8 300 250 0.6 200 Tc=75°C 150 Tc=100°C 100 t δ = 0.2 0.2 Single pulse t(s) δ=0.5 0 1E-3 T δ = 0.1 Tc=125°C IM 50 0.4 δ = 0.5 1E-2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode).
PAGE 4
STPS12045TV PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS Type Marking STPS12045TV STPS12045TV REF. Millimeters Inches A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.