Datasheet

1E-3 1E-2 1E-1 1E+0 5E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
δ
=tp/T
tp
Single pulse
δ = 0.5
δ = 0.2
δ = 0.1
Fig.4 : Relative variation of thermal transient
impedance junction to case versus pulse duration.
0 5 10 15 20 25 30 35 40 45
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
5E+5
VR(V)
IR(µA)
Tj=150°C
Tj=100°C
Tj=125°C
Tj=75°C
Tj=50°C
Tj=25°C
Fig. 5: Reverse leakage current versus reverse
voltageapplied (typical values, per diode).
1E-3 1E-2 1E-1 1E+0
0
50
100
150
200
250
300
350
400
t(s)
IM(A)
Tc=75°C
Tc=100°C
Tc=125°C
IM
t
δ=0.5
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
12 51020 50
0.1
1.0
10.0
VR(V)
C(nF)
F=1MHz
Tj=25°C
Fig. 6: Junction capacitance versus reverse
voltageapplied (typical values,per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
1E+1
1E+2
1E+3
VFM(V)
IFM(A)
Typical values
Tj=125°C
Tj=125°C
Tj=25°C
Fig. 7:
Forward voltage drop versus forward
current (maximum values, per diode).
STPS12045TV
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