Datasheet

ManualsBrandsST ManualsDiodesSchottky Diode, 160A, 45V, ISOTOP

STPS16045TV

June 1999 - Ed: 3A

POWER SCHOTTKY RECTIFIER

F(AV)

2 x 80 A

RRM

45 V

Tj (max) 150 °C

(max) 0.69 V

MAIN PRODUCT CHARACTERISTICS

VERY SMALL CONDUCTION LOSSES

NEGLIGIBLE SWITCHING LOSSES

EXTREMELY FAST SWITCHING

LOW THERMAL RESISTANCE

INSULATED PACKAGE:

Insulating voltage = 2500 V

(RMS)

Capacitance = 45 pF

FEATURES AND BENEFITS

Dual power Schottky rectifier suited for Switched

Mode Power Supplies and high frequency DC to

DC converters.

Packaged in ISOTOP, this device is especially in-

tended for use in low voltage, high frequency in-

verters, free wheeling and polarity protection

applications.

DESCRIPTION

ISOTOP

A1K1

A2K2

Symbol Parameter Value Unit

RRM

Repetitive peak reverse voltage 45 V

F(RMS)

RMS forward current 125 A

F(AV)

Average forward current Tc = 75°C

= 0.5

Per diode

Per device

160

FSM

Surge non repetitive forward current tp = 10 ms sinusoidal 900 A

RRM

Repetitive peak reverse current tp = 2

s square

F = 1kHz

RSM

Non repetitive peak reverse current tp = 100

s square 5 A

stg

Storage temperature range - 55 to + 150

Tj Maximum operating junction temperature * 150 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/

ABSOLUTE RATINGS

(limiting values, per diode)

ISOTOP is a trademark of STMicroelectronics

* :

dPtot

dTj

Rth

(

−

)

thermal runaway condition for a diode on its own heatsink

1/4

Summary of content (4 pages)

PAGE 1
STPS16045TV ® POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 80 A VRRM 45 V Tj (max) 150 °C VF (max) 0.69 V K2 A2 K1 A1 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE INSULATED PACKAGE: Insulating voltage = 2500 V(RMS) Capacitance = 45 pF ISOTOPTM DESCRIPTION Dual power Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters.
PAGE 2
STPS16045TV THERMAL RESISTANCES Symbol Parameter Junction to case Rth (j-c) Per diode Rth (c) Value Unit 1 °C/W Total 0.55 Coupling 0.1 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions IR * Reverse leakage current Tj = 25°C Min. Typ. Forward voltage drop Unit 1 mA VR = VRRM Tj = 125°C VF * Max.
PAGE 3
STPS16045TV Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 4: Relative variation of thermal transient impedance junction to case versus pulse duration (per diode). IM(A) 450 400 350 300 250 200 150 IM 100 50 0 1E-3 Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 δ = 0.5 Tc=75°C 0.4 Tc=100°C δ=0.5 T δ = 0.2 Tc=125°C 0.2 t t(s) δ = 0.1 Single pulse 1E-2 1E-1 1E+0 Fig.
PAGE 4
STPS16045TV PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. Millimeters Min. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Type Marking STPS16045TV STPS16045TV Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.