Datasheet

ManualsBrandsST ManualsDiodesRectifier Diode 120A 200V ISOTOP

1/5

MAIN PRODUCT CHARACTERISTICS

F(AV)

Up to 2 x 120 A

RRM

200 V

150°C

(typ)

0.75 V

(typ)

41 ns

STTH20002TV

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

RRM

Repetitive peak reverse voltage 200 V

F(RMS)

RMS forward voltage 170 A

F(AV)

Average forward current

δ = 0.5

Tc = 95°C Per diode 100 A

Tc = 80°C Per diode 120

FSM

Surge non repetitive forward current tp = 10ms sinusoidal 1000 A

stg

Storage temperature range -55 to + 150 °C

Maximum operating junction temperature 150 °C

ISOTOP

STTH20002TV1

A1 K1

A2 K2

July 2004 REV. 2

FEATURES AND BENEFITS

■ Suited for SMPS

■ Very Low Forward Losses

■ Low recovery time

■ High surge current capability

■ Insulated:

Insulating voltage=2500V

RMS

Capacitance = 55pF

DESCRIPTION

Dual rectifier suited for welding equipment, high

power industrial application.

Packaged in Isotop, this device is intended for use

in the secondary rectification of the applications.

Order Codes

Part Number Marking

STTH20002TV1 STTH20002TV1

Summary of content (5 pages)

PAGE 1
STTH20002TV ® TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) Up to 2 x 120 A A1 K1 VRRM 200 V A2 K2 Tj 150°C VF (typ) 0.75 V trr (typ) 41 ns K1 A1 K2 FEATURES AND BENEFITS ■ ■ ■ ■ ■ A2 Suited for SMPS Very Low Forward Losses Low recovery time High surge current capability Insulated: Insulating voltage=2500VRMS Capacitance = 55pF ISOTOP STTH20002TV1 DESCRIPTION Dual rectifier suited for welding equipment, high power industrial application.
PAGE 2
STTH20002TV THERMAL RESISTANCE Symbol Rth(j-c) Rth(c) Parameter Junction to case Maximum Unit Per diode 0.52 °C/W Total 0.31 Coupling 0.1 °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Test conditions Reverse leakage current Tj = 25°C Min. VR = VRRM Tj = 125°C VF ** Forward voltage drop Tj = 25°C Tj = 150°C 80 Max.
PAGE 3
STTH20002TV Fig. 1: Peak current versus duty cycle (per diode). Fig. 2-1: Forward voltage drop versus forward current (typical values, per diode). IM(A) IFM(A) 600 200 180 500 T 160 P = 80W δ=tp/T 400 140 tp Tj=150°C 120 300 100 P = 120W Tj=25°C 80 P = 160W 200 60 40 100 20 δ VFM(V) 0 0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.0 Fig.
PAGE 4
STTH20002TV Fig. 6: Reserve recovery time versus dIF/dt (typical values, per diode). Fig. 7: Peak reverse recovery current versus dIF/dt (typical values, per diode). trr(ns) IRM(A) 120 25 IF=100A VR=160V IF=100A VR=160V 100 20 Tj=125°C 80 15 Tj=125°C Tj=25°C 60 10 40 Tj=25°C 5 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 10 100 1000 10 100 1000 Fig. 8: Dynamic parameters versus junction temperature. QRR; IRM [Tj] / QRR; IRM [Tj=125°C] 1.4 IF=100A VR=160V 1.2 1.0 IRM 0.8 QRR 0.6 0.4 0.
PAGE 5
STTH20002TV PACKAGE MECHANICAL DATA ISOTOP REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S DIMENSIONS Millimeters Inches Min. Max. Min. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 7.8 8.20 0.307 0.323 0.75 0.85 0.030 0.033 1.95 2.05 0.077 0.081 37.80 38.20 1.488 1.504 31.50 31.70 1.240 1.248 25.15 25.50 0.990 1.004 23.85 24.15 0.939 0.951 24.80 typ. 0.976 typ. 14.90 15.10 0.587 0.594 12.60 12.80 0.496 0.504 3.50 4.30 0.138 0.169 4.10 4.30 0.161 0.169 4.60 5.00 0.181 0.197 4.00 4.30 0.157 0.69 4.