Datasheet

STTH20003TV Characteristics
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Figure 1. Conduction losses versus
average forward current (per diode)
Figure 2. Forward voltage drop versus
forward current (per diode)
0 20 40 60 80 100 120
0
20
40
60
80
100
120
P1(W)
δ = 1
δ = 0.2
δ = 0.1
δ = 0.5
T
δ
=t /T
p
t
p
δ = 0.05
I (av) (A)
F
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
10
100
500
I (A)
FM
T
j
=125°C
(Typical values)
T
j
=25°C
T
j
=125°C
V (V)
FM
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4. Peak reverse recovery current
versus dI
F
/dt (90% confidence, per
diode)
1E-3 1E-2 1E-1 1E+0 5E+0
0.0
0.2
0.4
0.6
0.8
1.0
Z/R
th(j-c) th(j-c)
T
δ
=t /T
p
t
p
Single pulse
t (s)
p
0 50 100 150 200 250 300 350 400 450 500
0
5
10
15
20
25
30
35
40
I (A)
RM
V =200V
R
T =125°C
j
I =2xI (av)
FF
IF=I (av)
F
I =0.5xI (av)
FF
dI /dt(A/µs)
F
Figure 5. Reverse recovery time versus
dI
F
/dt (90% confidence, per diode)
Figure 6. Softness factor (t
b
/t
a
) versus
dI
F
/dt (typical values, per diode)
0 50 100 150 200 250 300 350 400 450 500
0
20
40
60
80
100
120
140
160
180
200
220
240
260
t (ns)
rr
V =200V
R
T =125°C
j
I =2xI (av)
FF
I=I(av)
FF
I =0.5xI (av)
FF
dI /dt(A/µs)
F
0 50 100 150 200 250 300 350 400 450 500
0.0
0.1
0.2
0.3
0.4
0.5
0.6
S factor
V =200V
R
T =125°C
j
dI /dt(A/µs)
F