Datasheet

STTH4R02 Characteristics
Doc ID 12360 Rev 4 5/13
Figure 9. Junction capacitance versus
reverse applied voltage
(typical values)
Figure 10. Reverse recovery charges versus
dI
F
/dt (typical values)
10
100
1 10 100 1000
C(pF)
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
V
R
(V)
0
20
40
60
80
100
120
0 50 100 150 200 250 300 350 400 450 500
Q
RR
(nC)
I
F
=4A
V
R
=160V
T
j
=125°C
T
j
=25°C
dI
F
/dt(A/µs)
Figure 11. Reverse recovery time versus dI
F
/dt
(typical values)
Figure 12. Peak reverse recovery current
versus dI
F
/dt (typical values)
0
10
20
30
40
50
60
70
80
10 100 1000
t
RR
(ns)
I
F
=4A
V
R
=160V
T
j
=125°C
T
j
=25°C
dI
F
/dt(A/µs)
0
2
4
6
8
10
0 50 100 150 200 250 300 350 400 450 500
I
RM
(A)
I
F
=4A
V
R
=160V
T
j
=125°C
T
j
=25°C
dI
F
/dt(A/µs)
Figure 13. Dynamic parameters versus
junction temperature
Figure 14. Thermal resistance, junction to
ambient, versus copper surface
under tab - DPAK
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
Q
RR
;I
RM
[T
j
]/Q
RR
;I
RM
[T
j
=125°C]
I
RM
Q
RR
I
F
=4A
V
R
=160V
T
j
(°C)
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30 35 40
R
th(j-a)
(°C/W)
DPAK
S
CU
(cm²)
Epoxy printed circuit board FR4,
copper thickness = 35 µm