Datasheet

Characteristics STTH506
4/9
Figure 9. Relative variations of dynamic
parameters versus junction
temperature
Figure 10. Transient peak forward voltage
versus dI
F
/dt (typical values)
0.00
0.25
0.50
0.75
1.00
1.25
1.50
25 50 75 100 125
I and
RM
S factor
Q
RR
T (°C)
j
I=I
Reference: T =125°C
FF(AV)
j
V =400V
R
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0 100 200 300 400 500
V (V)
FP
dI /dt(A/µs)
F
I=I
T =125°C
FF(AV)
j
Figure 11. Forward recovery time versus
dI
F
/dt (typical values)
Figure 12. Junction capacitance versus
reverse voltage applied
(typical values)
Figure 13. Thermal resistance junction to
ambient versus copper surface
under tab (printed circuit board
FR4, e
CU
= 35 µm)
0
20
40
60
80
100
120
140
160
180
200
220
0 100 200 300 400 500
t (ns)
fr
dI /dt(A/µs)
F
I=I
T =125°C
FF(AV)
j
V =1.1 x V max.
FR F
1
10
100
1 10 100 1000
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30 35 40
R (°C/W)
th(j-a)
S (cm²)
(Cu)
DPAK