Datasheet

ManualsBrandsST ManualsDiscrete SemiconductorsMOSFET, N-Channel, 1kV, 13A, 350W, TO-247

August 2006 Rev 5 1/14

STW11NK100Z

STW13NK100Z

N-channel 1000V - 0.56Ω - 13A - TO-247

Zener - Protected SuperMESH™ PowerMOSFET

General features

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatibility

Description

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt

capability for the most demanding applications.

Such series complements ST full range of high

voltage MOSFETs including revolutionary

MDmesh™ products.

Applications

■ Switching application

Internal schematic diagram

Type

DSS

(@Tjmax)

DS(on)

STW13NK100Z 1000 V < 0.70 Ω 13 A 350W

TO-247

www.st.com

Order codes

Part number Marking Package Packaging

STW13NK100Z W13NK100Z TO-247 Tube

Downloaded from Arrow.com.

Summary of content (14 pages)

PAGE 1
STW11NK100Z STW13NK100Z N-channel 1000V - 0.56Ω - 13A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET General features Type VDSS (@Tjmax) STW13NK100Z 1000 V RDS(on) ID PW < 0.70 Ω 13 A 350W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility TO-247 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
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Contents STW13NK100Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 2 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . .
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STW13NK100Z 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (VGS = 0) 1000 V Drain-gate voltage (RGS = 20KΩ) 1000 V Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 13 A ID Drain current (continuous) at TC=100°C 8.2 A IDM(1) Drain current (pulsed) 52 A PTOT Total dissipation at TC = 25°C 350 W Derating Factor 2.
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Electrical ratings Table 4. Symbol BVGSO 1.1 STW13NK100Z Gate-source zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1mA (Open Drain) Min. Typ. 30 Max. Unit V Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source.
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STW13NK100Z 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, Tc = 125°C IGSS Gate body leakage current VGS = ± 20V (VGS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS = VGS, ID = 150 µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 6.
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Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Typ. Max Unit 13 A Source-drain current (pulsed) 52 A (2) Forward on voltage ISD=8.3A, VGS=0 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD=13 A, di/dt = 100A/µs, VDD=100 V, Tj=25°C (see Figure 18) 820 12.7 31 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD=13 A, di/dt = 100A/µs, VDD=100V, Tj=150°C (see Figure 18) 1050 17.
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STW13NK100Z Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics 7/14 Downloaded from Arrow.com.
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Electrical characteristics STW13NK100Z Figure 5. Transconductance Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature 8/14 Downloaded from Arrow.com. Figure 6. Static drain-source on resistance Capacitance variations Figure 10.
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STW13NK100Z Figure 11. Source-drain diode forward characteristics Electrical characteristics Figure 12. Normalized BVDSS vs temperature Figure 13. Maximum avalanche energy vs temperature 9/14 Downloaded from Arrow.com.
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Test circuit 3 STW13NK100Z Test circuit Figure 14. Unclamped Inductive load test circuit Figure 15. Unclamped Inductive waveform Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load switching and diode recovery times 10/14 Downloaded from Arrow.com.
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STW13NK100Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
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Package mechanical data STW13NK100Z TO-247 MECHANICAL DATA DIM. mm. MIN. MIN. TYP. MAX. 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S Downloaded from Arrow.com. inch MAX.
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STW13NK100Z 5 Revision history Revision history Table 8. Revision history Date Revision Changes 22-Jun-2004 1 Target document 09-Sep-2004 2 Preliminary document 28-Jan-2005 3 Complete version with curves 18-Sep-2005 4 Figure 12 changed 01-Aug-2006 5 New template, no content change 13/14 Downloaded from Arrow.com.
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STW13NK100Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.