Datasheet

ManualsBrandsST ManualsDiscrete SemiconductorsMOSFET, N-Channel, 500V, 45A, 417W, TO-247

July 2016

DocID8477 Rev 6

1/12

This is information on a product in full production.

www.st.com

STW45NM50

N-channel 500 V, 0.08 Ω typ., 45 A MDmesh™

Power MOSFET in a TO-247 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

DS(on)

max

STW45NM50

500 V

0.1 Ω

45 A

 100% avalanche tested

 High dv/dt and avalanche capabilities

 Low input capacitance and gate charge

 Low gate input resistance

Applications

 Switching applications

Description

This N-channel Power MOSFET is developed

using STMicroelectronics' revolutionary

MDmesh™ technology, which associates the

multiple drain process with the company's

PowerMESH™ horizontal layout. This device

offer extremely low on-resistance, high dv/dt and

excellent avalanche characteristics. Utilizing ST's

proprietary strip technique, this Power MOSFET

boasts an overall dynamic performance which is

superior to similar products on the market.

Table 1: Device summary

Order code

Marking

Package

Packaging

STW45NM50

W45NM50

TO-247

Tube

TO-247

Downloaded from Arrow.com.

Summary of content (12 pages)

PAGE 1
STW45NM50 N-channel 500 V, 0.08 Ω typ., 45 A MDmesh™ Power MOSFET in a TO-247 package Datasheet - production data Features     3 2 1 Order code VDS RDS(on) max ID STW45NM50 500 V 0.
PAGE 2
Contents STW45NM50 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ......................................................
PAGE 3
STW45NM50 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VGS Parameter Value Unit Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 45 A ID Drain current (continuous) at TC = 100 °C 28.
PAGE 4
Electrical characteristics 2 STW45NM50 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5: On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 V IDSS Zero gate voltage drain current IGSS Min. Typ. Max.
PAGE 5
STW45NM50 Electrical characteristics Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 250 V, ID = 22.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 29.1 - ns - 73.6 - ns VDD = 400 V, ID = 45 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 20.8 - ns - 58.3 - ns - 67.6 - ns Max.
PAGE 6
Electrical characteristics 2.1 STW45NM50 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance d Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on resistance 6/12 Downloaded from Arrow.com.
PAGE 7
STW45NM50 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics DocID8477 Rev 6 Downloaded from Arrow.com.
PAGE 8
Test circuits 3 STW45NM50 Test circuits Figure 13: Test circuit for resistive load switching times Figure 15: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive waveform 8/12 Downloaded from Arrow.com.
PAGE 9
STW45NM50 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 TO-247 package information Figure 19: TO-247 package outline DocID8477 Rev 6 Downloaded from Arrow.com.
PAGE 10
Package information STW45NM50 Table 9: TO-247 package mechanical data mm Dim. Min. Downloaded from Arrow.com. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 10/12 Typ. 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID8477 Rev 6 3.65 5.50 5.50 5.
PAGE 11
STW45NM50 5 Revision history Revision history Table 10: Document revision history Date Revision 30-Mar-2005 4 Modified value on Source drain diode 23-Jul-2009 5 Modified values on Switching times 6 Modified: Table 2: "Absolute maximum ratings", Table 3: "Thermal data", Table 4: "Avalanche characteristics", Table 5: "On/off states", Table 6: "Dynamic", Table 7: "Switching times" and Table 8: "Source-drain diode" Modified: Section 5.1: "Electrical characteristics (curves)" Updated: Section 7.
PAGE 12
STW45NM50 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.