Datasheet

ManualsBrandsST ManualsDiscrete SemiconductorsMOSFET, N-Channel, 600V, 45A, 417W, TO-247

April 2007 Rev 8 1/12

STW45NM60

N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247

MDmesh™ Power MOSFET

Features

■ High dv/dt and avalanche capabilities

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Description

The MDmesh™ is a new revolutionary Power

MOSFET technology that associates the multiple

drain process with the Company’s PowerMESH™

horizontal layout. The resulting product has an

outstanding low on-resistance, impressively high

dv/dt and excellent avalanche characteristics. The

adoption of the Company’s proprietary strip

technique yields overall dynamic performance

that is significantly better than that of similar

competitor’s products.

Application

■ Switching application

Internal schematic diagram

Type

DSS

(@Tjmax)

DS(on)

STW45NM60 650V < 0.11Ω 45A

TO-247

www.st.com

Order code

Part number Marking Package Packaging

STW45NM60 W45NM60 TO-247 Tube

Downloaded from Arrow.com.

Summary of content (12 pages)

PAGE 1
STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) RDS(on) ID STW45NM60 650V < 0.11Ω 45A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance TO-247 Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company’s PowerMESH™ horizontal layout.
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Contents STW45NM60 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . .
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STW45NM60 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate- source voltage ±30 V ID Drain current (continuous) at TC = 25°C 45 A ID Drain current (continuous) at TC = 100°C 28 A IDM (1) Drain current (pulsed) 180 A PTOT Total dissipation at TC = 25°C 417 W Derating factor 3.33 W/°C 15 V/ns –65 to 150 °C 150 °C Value Unit VGS dv/dt (2) Tstg Tj Parameter Peak diode recovery voltage slope Storage temperature Max.
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Electrical characteristics 2 STW45NM60 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS = 0 Min. Typ. Max. Unit 600 V VDS = Max rating 10 µA VDS = Max rating, TC = 125 °C 100 µA Gate-body leakage current (VDS = 0) VGS = ±30V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 4 5 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 22.
PAGE 5
STW45NM60 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 250V, ID = 22.5A RG = 4.7Ω VGS = 10V Figure 13 30 20 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 400V, ID = 45A, RG = 4.7Ω, VGS = 10V Figure 13 16 23 40 ns ns ns Table 7. Symbol ISD ISDM VSD (1) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Test conditions Min. Typ. Max.
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Electrical characteristics STW45NM60 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static-drain source on resistance 6/12 Downloaded from Arrow.com.
PAGE 7
STW45NM60 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature 7/12 Downloaded from Arrow.com.
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Test circuit 3 STW45NM60 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 Downloaded from Arrow.com. Figure 18.
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STW45NM60 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
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Package mechanical data STW45NM60 TO-247 MECHANICAL DATA DIM. mm. MIN. MIN. TYP. MAX. 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S Downloaded from Arrow.com. inch MAX.
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STW45NM60 5 Revision history Revision history Table 8. Revision history Date Revision Changes 05-Mar-2005 5 Complete document with curves 16-May-2006 6 The document has been reformatted 18-Dec-2006 7 Updates curves:Figure 1., Figure 4. and Figure 6. 02-Apr-2007 8 Figure 1. has been updated. 11/12 Downloaded from Arrow.com.
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STW45NM60 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.