Datasheet

Electrical characteristics STW45NM60
4/12
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0 600 V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating 10 µA
V
DS
= Max rating, T
C
= 125 °C 100 µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±30V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 3 4 5 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 22.5A 0.09 0.11 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 22.5A
30 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
3800
1250
80
pF
pF
pF
C
oss eq.
(2)
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
= 0V, V
DS
= 0V to 480V 340 pF
R
G
Gate input resistance
f=1 MHz Gate DC Bias = 0
test signal level = 20mV
open drain
1.4 Ω
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400V, I
D
= 45A,
V
GS
= 10V
Figure 14
96
31
43
134 nC
nC
nC
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