Datasheet

ManualsBrandsST ManualsDriversHigh-Side Driver, 41V, Tape & Reel

September 2013 Doc ID 13493 Rev 5 1/31

VN5160S-E

Single channel high side driver for automotive applications

Features

■ Main

– Inrush current active management by

power limitation

– Very low stand-by current

– 3.0V CMOS compatible input

– Optimized electromagnetic emission

– Very low electromagnetic susceptibility

– In compliance with the 2002/95/EC

european directive

■ Diagnostic Functions

– Open drain status output

– On-state open load detection

– Off-state open load detection

– Thermal shutdown indication

■ Protection

– Undervoltage shutdown

– Overvoltage clamp

– Output stuck to Vcc detection

– Load current limitation

– Self limiting of fast thermal transients

– Protection against loss of ground and loss

of V

– Thermal shutdown

– Reverse battery protection (see Figure 28)

– Electrostatic discharge protection

Applications

■ All types of resistive, inductive and capacitive

loads

Description

The VN5160S-E is a monolithic device made

using STMicroelectronics VIPower M0-5

technology. It is intended for driving resistive or

inductive loads with one side connected to

ground. Active V

voltage clamp protects the

device against low energy spikes.The device

detects open load condition both in on and off-

state, when STAT_DIS is left open or driven low.

Output shorted to V

is detected in the off-state.

When STAT_DIS is driven high, STATUS is in a

high impedance condition. Output current

limitation protects the device in overload

condition. In case of long duration overload, the

device limits the dissipated power to safe level up

to thermal shutdown intervention. Thermal

shutdown with automatic restart allows the device

to recover normal operation as soon as fault

condition disappears.

Max supply voltage V

41V

Operating voltage range V

4.5 to 36V

Max on-state resistance (per ch.) R

160 m

Current limitation (typ) I

LIMH

5.4 A

Off-state supply current I

2 µA

(1)

1. Typical value with all loads connected

SO-8

Table 1. Device summary

Package

Order codes

Tube Tape and reel

SO-8 VN5160S-E VN5160STR-E

www.st.com

Summary of content (31 pages)

PAGE 1
VN5160S-E Single channel high side driver for automotive applications Features Max supply voltage VCC 41V Operating voltage range VCC 4.5 to 36V Max on-state resistance (per ch.) RON 160 m Current limitation (typ) ILIMH 5.4 A Off-state supply current IS 2 µA(1) SO-8 – Reverse battery protection (see Figure 28) – Electrostatic discharge protection 1.
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Contents VN5160S-E Contents 1 Block diagram and pins description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.3 Electrical characteristics . . . . . . . . . .
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VN5160S-E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pins function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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List of figures VN5160S-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. 4/31 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . .
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VN5160S-E 1 Block diagram and pins description Block diagram and pins description Figure 1. Block diagram VCC VCC CLAMP UNDERVOLTAGE PwCLAMP GND DRIVER ILIM INPUT VDSLIM LOGIC STATUS OPENLOAD ON OPENLOAD OFF STAT_DIS OVERTEMP. PwrLIM Table 2. Pins function Name VCC OUTPUT GND INPUT STATUS STAT_DIS Function Battery connection. Power output. Ground connection. Must be reverse battery protected by an external diode/resistor network.
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Block diagram and pins description Figure 2. VN5160S-E Configuration diagram (top view) VCC OUTPUT OUTPUT VCC 5 6 7 8 4 3 2 1 STAT_DIS STATUS INPUT GND SO-8 Table 3. Suggested connections for unused and N.C. pins Connection / Pin Status N.C. Output Input STAT_DIS Floating X X X X X To ground N.R.(1) X N.R. Through 10K resistor Through 10K resistor 1. Not recommended.
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VN5160S-E 2 Electrical specifications Electrical specifications Figure 3. Current and voltage conventions IS VCC ISD IOUT STAT_DIS VSD VCC VF OUTPUT IIN VOUT ISTAT INPUT STATUS VINn VSTAT GND IGND Note: VF = VOUT - VCC during reverse battery condition. 2.1 Absolute maximum ratings Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may cause permanent damage to the device.
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Electrical specifications Table 4. VN5160S-E Absolute maximum ratings (continued) Symbol Parameter Value Unit 4000 4000 4000 5000 5000 V V V V V 750 V Junction operating temperature -40 to 150 °C Storage temperature -55 to 150 °C Electrostatic discharge (Human Body Model: R=1.5K C=100pF) – INPUT – STATUS VESD – STAT_DIS – OUTPUT – VCC VESD Tj Tstg 2.2 Thermal data Table 5.
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VN5160S-E 2.3 Electrical specifications Electrical characteristics Values specified in this section are for 8V
PAGE 10
Electrical specifications Table 8. Symbol VN5160S-E Status pin (VSD=0) Parameter Test conditions Min. Typ. Max. Unit 0.5 V VSTAT Status low output voltage ISTAT= 1.6 mA, VSD= 0V ILSTAT Status leakage current Normal operation or VSD= 5V, VSTAT= 5V 10 µA CSTAT Status pin input capacitance Normal operation or VSD=5V, VSTAT= 5V 100 pF VSCL Status clamp voltage ISTAT= 1mA ISTAT= - 1mA 7 V V Table 9.
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VN5160S-E Electrical specifications Table 10.
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Electrical specifications Figure 4. VN5160S-E Status timings OPEN LOAD STATUS TIMING (with external pull-up) OPEN LOAD STATUS TIMING (without external pull-up) IOUT < IOL VIN IOUT < IOL VIN VOUT > VOL VOUT < VOL VSTAT VSTAT tDOL(on) tDOL(on) tPOL OVER TEMP STATUS TIMING OUTPUT STUCK TO Vcc Tj > TTSD IOUT > IOL VIN VOUT > VOL VIN VSTAT VSTAT tDOL(on) Figure 5.
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VN5160S-E Electrical specifications Table 12. Truth table Conditions INPUT OUTPUT STATUS (VSD=0V)(1) Normal operation L H L H H H Current limitation L H L X H H Overtemperature L H L L H L Undervoltage L H L L X X Output voltage > VOL L H H H L(2) H Output current < IOL L H L H H(3) L 1. If the VSD is high, the STATUS pin is in a high impedance. 2. The STATUS pin is low with a delay equal to tDSTKON after INPUT falling edge. 3.
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Electrical specifications Table 13. VN5160S-E Electrical transient requirements (part 1/3) ISO 7637-2: 2004(E) Test levels Test pulse III IV Number of pulses or test times 1 -75V -100V 5000 pulses 0.5 s 5s 2 ms, 10  2a +37V +50V 5000 pulses 0.2 s 5s 50 µs, 2  3a -100V -150V 1h 90 ms 100 ms 0.1 µs, 50  3b +75V +100V 1h 90 ms 100 ms 0.1 µs, 50  4 -6V -7V 1 pulse 100 ms, 0.
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VN5160S-E Electrical specifications Figure 7.
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Electrical specifications VN5160S-E 2.4 Electrical characteristics curves Figure 8. Off-state output current Figure 9. Iloff[nA] Vicl[V] 600 7.0 Input clamp voltage 6.8 500 Iin = 1mA 6.6 6.4 Off-state Vcc=13V Vin=Vout=0V 400 6.2 6.0 300 5.8 200 5.6 5.4 100 0 -50 5.2 -25 0 25 50 75 100 125 150 175 5.0 -50 -25 0 25 Tc (°C) Figure 11. 5.0 4.0 4.5 3.5 4.0 125 150 175 150 175 150 175 Input high-level voltage 3.0 3.5 2.5 Vin = 2.1V 3.0 2.5 2.0 2.0 1.5 1.
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VN5160S-E Electrical specifications Figure 14. Status low-output voltage Figure 15. Status leakage current Vstat[V] Ilstat[µA] 1.0 0.075 0.9 0.065 0.8 0.7 0.055 0.6 0.5 Vstat = 5V 0.045 0.4 Istat = 1.6mA 0.3 0.035 0.2 0.025 0.1 0.0 -50 -25 0 25 50 75 100 125 150 175 0.015 -50 -25 0 25 50 Tc (°C) 75 100 125 150 175 Tc (°C) Figure 16. Status clamp voltage Figure 17. On-state resistance vs Tcase Ronl[m Ohm ] Vscl[V] 300 9.0 8.5 250 8.0 7.5 200 7.0 6.5 150 6.
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Electrical specifications VN5160S-E Figure 20. Open-load off-state voltage detection threshold Figure 21. Turn-on voltage slope Vol[V] (dVout/dt)on[V/m s] 5.0 1000 4.5 900 4.0 800 3.5 700 3.0 600 Vin = 0V 2.5 400 1.5 300 1.0 200 0.5 100 0.0 -50 -25 0 25 Vcc = 13V RL = 13Ohm 500 2.0 50 75 100 125 150 0 -50 175 -25 0 25 50 Tc (°C) Figure 22.
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VN5160S-E Electrical specifications Figure 26. High-level STAT_DIS voltage Figure 27.
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Application Information 3 VN5160S-E Application Information Figure 28. Application schematic +5V +5V VCC Rprot STAT_DIS Dld Rprot INPUT Rprot STATUS µC OUTPUT GND VGND RGND DGND 3.1 GND protection network against reverse battery 3.1.1 Solution 1: resistor in the ground line (RGND only) This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1. RGND  600mV / (IS(on)max) 2.
PAGE 21
VN5160S-E 3.1.2 Application Information Solution 2: a diode (DGND) in the ground line A resistor (RGND=1kshould be inserted in parallel to DGND if the device drives an inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network will produce a shift (600mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground.
PAGE 22
Application Information VN5160S-E The values of VOLmin, VOLmax and IL(off2) are available in the Electrical characteristics section. Figure 29. Open-load detection in off-state V batt.
PAGE 23
VN5160S-E 3.5 Application Information Maximum demagnetization energy (VCC = 13.5V) Figure 30.
PAGE 24
Package and PCB thermal data VN5160S-E 4 Package and PCB thermal data 4.1 SO-8 thermal data Figure 31. SO-8 PC board Note: Layout condition of Rth and Zth measurements (PCB: FR4 area= 4.8 mm x 4.8 mm, PCB thickness=2 mm, Cu thickness= 35 µm, Copper areas: from minimum pad lay-out to 2 cm2). Figure 32. Rthj-amb vs PCB copper area in open box free air condition RTHj_amb(°C/W) 110 100 90 80 70 60 0 0.5 1 1.5 PCB Cu heatsink area (cm^2) 24/31 Doc ID 13493 Rev 5 2 2.
PAGE 25
VN5160S-E Package and PCB thermal data Figure 33. SO-8 Thermal impedance junction ambient single pulse ZTH (°C/W) 1000 Footprint 100 2 cm2 10 1 0.1 0.0001 0.001 0.01 0.1 1 Time (s) 10 100 1000 Equation 1: pulse calculation formula Z TH = R TH   + Z THtp  1 –   where  = tP/T Figure 34. Thermal fitting model of a single-channel HSD in SO-8(1) 1.
PAGE 26
Package and PCB thermal data Table 16. 26/31 VN5160S-E Thermal parameter Area/island (cm2) Footprint R1 (°C/W) 1.2 R2 (°C/W) 6 R3 (°C/W) 3.5 R4 (°C/W) 21 R5 (°C/W) 16 R6 (°C/W) 58 C1 (W.s/°C) 0.0008 C2 (W.s/°C) 0.0016 C3 (W.s/°C) 0.0075 C4 (W.s/°C) 0.045 C5 (W.s/°C) 0.35 C6 (W.s/°C) 1.
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VN5160S-E Package and packing information 5 Package and packing information 5.1 ECOPACK® packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 5.2 Package mechanical data Figure 35.
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Package and packing information SO-8 Table 17. VN5160S-E SO-8 mechanical data Dim. Millimeter Min. Typ. A a1 1.75 0.1 0.25 a2 1.65 a3 0.65 0.85 b 0.35 0.48 b1 0.19 0.25 C 0.25 0.5 c1 45 (typ.) D 4.8 5 E 5.8 6.2 e 1.27 e3 3.81 F 3.8 4 L 0.4 1.27 M 0.6 S L1 28/31 Max. 8 (max.) 0.8 Doc ID 13493 Rev 5 1.
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VN5160S-E 5.3 Package and packing information Packing information Figure 36. SO-8 tube shipment (no suffix) B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) C A 100 2000 532 3.2 6 0.6 All dimensions are in mm. Figure 37. SO-8 tape and reel shipment (suffix “TR”) Reel dimensions Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4 All dimensions are in mm.
PAGE 30
Revision history 6 VN5160S-E Revision history Table 18. 30/31 Document revision history Date Revision Changes Feb-2007 1 Initial release. May-2007 2 Document rewritten, restructured and put in corporate technical literature template. 17-Dec-2007 3 Table 4: Absolute maximum ratings: changed EMAX value from 14 to 34 mJ. Table 13: Electrical transient requirements (part 1/3): updated test level values III and IV for test pulse 5b and notes. Added Section 3.
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VN5160S-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.