Datasheet

This is information on a product in full production.
September 2013 DocID025077 Rev 2 1/22
VND5N07-E
OMNIFET II
fully autoprotected Power MOSFET
Datasheet
-
production data
Features
Linear current limitation
Thermal shutdown
Short circuit protection
Integrated clamp
Low current drawn from input pin
Diagnostic feedback through input pin
ESD protection
Direct access to the gate of the power mosfet
(analog driving)
Compatible with standard Power MOSFET
Description
The VND5N07-E is a monolithic device designed
using STMicroelectronics
®
VIPower
®
M0
technology, intended for replacement of standard
Power MOSFETs from DC to 50 KHz
applications. Built-in thermal shutdown, linear
current limitation and overvoltage clamp protect
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Max. on-state resistance (per ch.) R
DS (on)
0.2Ω
Current limitation (typ) I
LIMH
5 A
Drain-Source clamp voltage V
CLAMP
70V
1
3
3
2
1
DPAK
TO-252
IPAK
TO-251
Table 1. Device summary
Package
Order codes
Tube Tape and reel
DPAK VND5N07-E VND5N07TR-E
IPAK VND5N07-1-E
www.st.com

Summary of content (22 pages)