Datasheet

ManualsBrandsST ManualsDriversPower MOSFET, SOT-223, 55V

This is information on a product in full production.

September 2013 Doc ID 15626 Rev. 5 1/22

VNN3NV04P-E

VNS3NV04P-E

OMNIFET II

fully autoprotected Power MOSFET

Datasheet

−

production data

Features

■

Linear current limitation

■

Thermal shutdown

■

Short circuit protection

■

Integrated clamp

■

Low current drawn from input pin

■

Diagnostic feedback through input pin

■

ESD protection

■

Direct access to the gate of the Power

MOSFET (analog driving)

■

Compatible with standard Power MOSFET in

compliance with the 2002/95/EC European

directive

Description

The VNN3NV04P-E, VNS3NV04P-E, are

monolithic devices designed in

STMicroelectronics

VIPower

M0-3 Technology,

intended for replacement of standard Power

MOSFETs from DC up to 50 kHz applications.

Built in thermal shutdown, linear current limitation

and overvoltage clamp protect the chip in harsh

environments.

Fault feedback can be detected by monitoring the

voltage at the input pin.

Type R

DS(on)

lim

clamp

VNN3NV04P-E

VNS3NV04P-E

120 mΩ 3.5 A 40 V

Table 1. Device summary

Package

Order codes

Tube Tape and reel

SOT-223 — VNN3NV04PTR-E

SO-8 VNS3NV04P-E VNS3NV04PTR-E

SOT-223

SO-8

www.st.com

Summary of content (22 pages)

PAGE 1
VNN3NV04P-E VNS3NV04P-E OMNIFET II fully autoprotected Power MOSFET Datasheet − production data Features Type RDS(on) Ilim Vclamp VNN3NV04P-E VNS3NV04P-E 120 mΩ 3.
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Contents VNN3NV04P-E, VNS3NV04P-E Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.3 Electrical characteristics . .
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VNN3NV04P-E, VNS3NV04P-E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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List of figures VNN3NV04P-E, VNS3NV04P-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. 4/22 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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VNN3NV04P-E, VNS3NV04P-E 1 Block diagram and pin description Block diagram and pin description Figure 1. Block diagram DRAIN 2 Overvoltage Clamp INPUT 1 Gate Control Linear Current Limiter Over Temperature 3 SOURCE Figure 2. FC01000 Configuration diagram (top view) SO-8 Package(1) SOURCE 1 8 DRAIN SOURCE INPUT DRAIN DRAIN SOURCE 4 5 DRAIN 1. For the pins configuration related to SOT-223 see outlines at page 1. Doc ID 15626 Rev.
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Electrical specifications 2 VNN3NV04P-E, VNS3NV04P-E Electrical specifications Figure 3. Current and voltage conventions ID VDS DRAIN IIN RIN INPUT SOURCE VIN 2.1 Absolute maximum ratings Table 2.
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VNN3NV04P-E, VNS3NV04P-E 2.2 Electrical specifications Thermal data Table 3. Thermal data Value Symbol Parameter Unit SOT-223 Rthj-case Thermal resistance junction-case max Rthj-lead Thermal resistance junction-lead max Rthj-amb Thermal resistance junction-ambient max SO-8 18 °C/W 15 (1) 70 °C/W (1) 65 °C/W 1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 mm thick) connected to all DRAIN pins. 2.
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Electrical specifications Table 4. Electrical characteristics (continued) Symbol td(on) tr td(off) tf (dI/dt)on Qi VNN3NV04P-E, VNS3NV04P-E Parameter Test conditions Min Turn-on delay time Rise time Turn-off delay time VDD = 15 V; ID = 1.5 A; Vgen = 5 V; Rgen = 2.2 KΩ (see Figure 4) Fall time Typ Max Unit 0.45 1.35 µs 2.5 7.5 µs 3.3 10.0 µs 2.0 6.0 µs Turn-on current slope VDD = 15 V; ID = 1.5 A; Vgen = 5 V; Rgen = RIN MIN = 220 Ω 4.7 A/µs Total input charge VDD = 12 V; ID = 1.
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VNN3NV04P-E, VNS3NV04P-E 3 Protection features Protection features During normal operation, the input pin is electrically connected to the gate of the internal Power MOSFET through a low impedance path. The device then behaves like a standard Power MOSFET and can be used as a switch from DC up to 50 kHz. The only difference from the user’s standpoint is that a small DC current IISS (typ. 100 µA) flows into the input pin in order to supply the internal circuitry.
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Protection features Figure 4. VNN3NV04P-E, VNS3NV04P-E Switching time test circuit for resistive load VD Rgen ID Vgen 90% tr tf 10% t td(on) Vgen td(off) t Figure 5. Test circuit for diode recovery times A A D I FAST DIODE OMNIFET S L=100uH B B 220Ω D Rgen VDD I Vgen OMNIFET S 8.5 Ω 10/22 Doc ID 15626 Rev.
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VNN3NV04P-E, VNS3NV04P-E Protection features Figure 6. Unclamped inductive load test circuits Figure 8. Unclamped inductive waveforms VIN Figure 7. Input charge test circuit GEN ND8003 Doc ID 15626 Rev.
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Protection features VNN3NV04P-E, VNS3NV04P-E 3.1 Electrical characteristics curves Figure 9. Thermal impedance for SOT-223 Figure 10. Derating curve Figure 11. Transconductance Figure 12. Static drain-source on resistance vs input voltage (part 1/2) Gfs (S) Rds(on) (mohms) 11 300 10 275 Vds=13V Tj=-40ºC 9 250 Tj=25ºC 8 Tj=150ºC 225 Tj=150ºC 7 200 175 6 Id=3.5A Id=1A 150 5 Tj=25ºC 125 4 100 3 Tj=-40ºC 75 Id=3.5A Id=1A 50 Id=3.5A Id=1A 2 1 25 0 0 0.5 1 1.5 2 2.
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VNN3NV04P-E, VNS3NV04P-E Protection features Figure 15. Static drain source on resistance Rds(on) (ohms) Figure 16. Turn-on current slope (part 1/2) di/dt(A/us) 4.5 5 Tj=-40ºC 4 4.5 Vin=2.5V Vin=5V Vdd=15V Id=1.5A 4 3.5 3.5 3 3 2.5 2.5 2 2 1.5 1.5 Tj=25ºC 1 1 Tj=150ºC 0.5 0.5 0 0 0 0 0.05 0.1 0.15 0.2 0.25 500 250 750 1000 1250 1500 1750 2000 2250 2500 0.3 Rg(ohm) Id(A) Figure 17. Turn-on current slope (part 2/2) Figure 18.
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Protection features VNN3NV04P-E, VNS3NV04P-E Figure 21. Turn-off drain source voltage slope Figure 22. Turn-off drain source voltage slope (part 1/2) (part 2/2) dv/dt(V/usec) dv/dt(V/usec) 300 300 275 275 250 225 Vin=3.5V Vdd=15V Id=1.5A 250 Vin=5V Vdd=15V Id=1.5A 225 200 200 175 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0 0 500 250 1000 1500 750 1250 2000 1750 2500 0 2250 500 250 1000 750 1500 1250 Rg(ohm) 2000 1750 2500 2250 Rg(ohm) Figure 23.
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VNN3NV04P-E, VNS3NV04P-E Protection features Figure 27. Switching time resistive load (part 2/2) Figure 28. Normalized input threshold voltage vs temperature Vinth (V) t(nsec) 2 900 1.8 800 tr Vdd=15V Id=1.5A Rg=220ohm 700 Vds=Vin Id=1mA 1.6 1.4 600 1.2 500 1 400 0.8 td(off) 300 0.6 tf 200 0.4 td(on) 100 0.2 0 0 3.25 3.5 3.75 4 4.25 4.5 4.75 5 -50 5.25 -25 0 25 50 75 100 125 150 175 Tc (ºC) Vin(V) Figure 29. Normalized current limit vs junction Figure 30.
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Package and packing information 4 VNN3NV04P-E, VNS3NV04P-E Package and packing information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 SOT-223 mechanical data Table 5. SOT-223 mechanical data Millimeters Symbol Min. Typ. Max. A 1.8 B 0.6 0.7 0.
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VNN3NV04P-E, VNS3NV04P-E 4.2 Package and packing information SO-8 mechanical data Table 6. SO-8 mechanical data Millimeters Symbol Min Typ A a1 Max 1.75 0.1 0.25 a2 1.65 a3 0.65 0.85 b 0.35 0.48 A 1.75 A1 0.10 A2 1.25 b 0.28 0.48 c 0.17 0.23 D(1) 4.80 4.90 5.00 E 5.80 6.00 6.20 E1(2) 3.80 3.90 4.00 e 0.25 1.27 h 0.25 0.50 L 0.40 1.27 L1 k 1.04 0° ccc 8° 0.10 1. Dimension “D” does not include mold flash, protrusions or gate burrs.
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Package and packing information VNN3NV04P-E, VNS3NV04P-E Figure 32. SO-8 package dimensions 0016023 D 18/22 Doc ID 15626 Rev.
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VNN3NV04P-E, VNS3NV04P-E 4.3 Package and packing information SOT-223 packing information Figure 33. SOT-223 tape and reel shipment (suffix “TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 12.4 60 18.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb.
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Package and packing information 4.4 VNN3NV04P-E, VNS3NV04P-E SO-8 packing information Figure 34. SO-8 tube shipment (no suffix) B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) C A 100 2000 532 3.2 6 0.6 All dimensions are in mm. Figure 35. SO-8 tape and reel shipment (suffix “TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4 All dimensions are in mm.
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VNN3NV04P-E, VNS3NV04P-E 5 Revision history Revision history Table 7. Document revision history Date Revision Changes 24-May-2009 1 Initial release. 21-Jul-2009 2 Updated Table 1: Device summary. 29-Sep_2009 3 Removed target specification on cover page. 10-May-2012 4 Updated Table 1: Device summary Table 2: Absolute maximum ratings: – RIN MIN: changed unit to Ω (it was W) 18-Sep-2013 5 Updated Disclaimer. Doc ID 15626 Rev.
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VNN3NV04P-E, VNS3NV04P-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.