Datasheet

ManualsBrandsST ManualsDriversRelay Driver SO-10, 36V, SO-10, Tube

September 2013

Rev 6

1/26

VNQ660SP

Quad channel high side solid state relay

Features

■ CMOS compatible inputs

■ Off state open load detection

■ Undervoltage and overvoltage shutdown

■ Overvoltage clamp

■ Thermal shutdown

■ Current limitation

■ Very low standby power dissipation

■ Protection against loss of ground and loss of

■

Reverse battery protection

(a)

Description

The VNQ660SP is a monolithic device made by

using| STMicroelectronics VIPower M0-3

Technology, intended for driving resistive or

inductive loads with one side connected to

ground.

This device has four independent channels. Built-

in thermal shutdown and output current limitation

protect the chip from over temperature and short

circuit.

Type R

DS(on)

OUT

VNQ660SP 50mΩ

(1)

1. Per each channel.

6A 36V

a. See Application schematic on page 16

PowerSO-10

Table 1. Device summary

Package

Order codes

Tube Tape and reel

PowerSO-10 VNQ660SP VNQ660SP13TR

www.st.com

Summary of content (26 pages)

PAGE 1
VNQ660SP Quad channel high side solid state relay Features Type RDS(on) IOUT VCC VNQ660SP 50mΩ(1) 6A 36V 10 1. Per each channel.
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Contents VNQ660SP Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.3 Electrical characteristics . . . . . . . . . .
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VNQ660SP List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 5 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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List of figures VNQ660SP List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. 4/26 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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VNQ660SP 1 Block diagram and pin description Block diagram and pin description Figure 1. Block diagram VCC OVERVOLTAGE UNDERVOLTAGE DEMAG 1 DRIVER 1 OUTPUT 1 ILIM1 INPUT 1 DEMAG 2 INPUT 2 DRIVER 2 INPUT 3 OUTPUT 2 ILIM2 LOGIC DEMAG 3 INPUT 4 DRIVER 3 STATUS OUTPUT 3 ILIM3 STATUS DEMAG 4 DRIVER 4 OVERTEMP. 1 OUTPUT 4 ILIM4 OVERTEMP. 2 OPEN LOAD OFF-STATE OVERTEMP. 3 OVERTEMP. 4 GND Figure 2.
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Electrical specifications VNQ660SP 2 Electrical specifications 2.1 Absolute maximum ratings Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
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VNQ660SP 2.3 Electrical specifications Electrical characteristics Values specified in this section are for 6V < VCC < 24V; -40°C < Tj < 150°C, unless otherwise stated. Figure 3. Current and voltage conventions IS IIN1 INPUT 1 VCC OUTPUT 1 IIN2 VIN1 INPUT 2 IOUT2 IOUT3 VCC VOUT1 VOUT2 OUTPUT 3 INPUT 3 VOUT3 IOUT4 VIN3 IIN4 OUTPUT 4 INPUT 4 VIN4 VOUT4 GND STATUS VSTAT Note: VF1 (*) OUTPUT 2 IIN3 VIN2 IOUT1 ISTAT IGND VFn = VCCn - VOUTn during reverse battery condition. Table 5.
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Electrical specifications Table 5. VNQ660SP Power (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit 0 50 µA -75 0 µA IL(off1) Off state output current VIN = VOUT = 0V IL(off2) Off state output current VIN = 0V; VOUT = 3.5V IL(off3) Off state output current VIN = VOUT = 0V; VCC = 13V; Tj = 125°C 5 µA IL(off4) Off state output current VIN = VOUT = 0V; VCC = 13V; Tj =25°C 3 µA 1. Per device. Table 6. Symbol Min. Typ. Max.
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VNQ660SP Electrical specifications Table 8. Switching (VCC = 13V; Tj = 25°C) Symbol Parameter Test conditions Min. Typ. Max.
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Electrical specifications Figure 5. VNQ660SP Switching characteristics VOUT 90% 80% dVOUT/dt(off) dVOUT/dt(on) 10% tr tf t ISENSE 90% INPUT t tDSENSE td(on) td(off) t Table 11.
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VNQ660SP Electrical specifications Table 12. Electrical transient requirements ISO T/R Test level 7637/1 Test pulse I II III IV Delays and impedance 1 - 25V - 50V - 75V - 100V 2ms, 10Ω 2 + 25V + 50V + 75V + 100V 0.2ms, 10Ω 3a - 25V - 50V - 100V - 150V 0.1µs, 50Ω 3b + 25V + 50V + 75V + 100V 0.1µs, 50Ω 4 - 4V - 5V - 6V - 7V 100ms, 0.01Ω 5 + 26.5V + 46.5V + 66.5V + 86.
PAGE 12
Electrical specifications Figure 6.
PAGE 13
VNQ660SP Electrical specifications 2.4 Electrical characteristics curves Figure 7. Off state output current Figure 8. High level input current IL(off1) (µA) Iih (µA) 10 7 9 Off state Vcc=24V Vout=0V 8 7 6 Vin=3.25V 5 6 4 5 3 4 3 2 2 1 1 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (ºC ) Figure 9. 50 75 100 125 150 175 150 175 150 175 Tc (ºC ) Input clamp voltage Figure 10. Turn-on voltage slope Vicl (V) dVout/dt(on) (V/ms) 8 500 450 7.
PAGE 14
Electrical specifications VNQ660SP Figure 13. ILIM vs Tcase Figure 14. On state resistance vs VCC Vih (V) RDS (on) (mOhm) 4 100 90 3.75 Iout=1A 80 Tc=150ºC 3.5 70 3.25 60 3 50 Tc=25ºC 40 2.75 Tc= - 40ºC 30 2.5 20 2.25 10 2 0 -50 -25 0 25 50 75 100 125 150 175 8 9 10 11 12 Tc (ºC ) 13 14 15 16 17 18 19 20 Vcc (V) Figure 15. Input high level Figure 16. Input hysteresis voltage Vih (V) Vihyst (V) 4 1.4 3.75 1.3 1.2 3.5 1.1 3.25 1 3 0.9 2.75 0.8 2.
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VNQ660SP Electrical specifications Figure 19. Status leakage current Figure 20. Status low output voltage Ilstat (µA) Vstat (V) 0.6 0.05 0.045 0.525 Vstat=5V 0.04 Istat=1.6mA 0.45 0.035 0.375 0.03 0.3 0.025 0.02 0.225 0.015 0.15 0.01 0.075 0.005 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (ºC ) 50 75 100 125 150 175 Tc (ºC ) Figure 21. Status clamp voltage Figure 22. Openload Off state detection threshold Vscl (V) Vol (V) 7.4 5 4.5 7.
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Application information 3 VNQ660SP Application information Figure 23. Application schematic +5V +5V VCC Rprot STATUS Dld Rprot INPUT1 OUTPUT1 µC Rprot INPUT2 OUTPUT2 Rprot INPUT3 OUTPUT3 INPUT4 OUTPUT4 Rprot GND RGND VGND DGND . Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2. 3.1 GND protection network against reverse battery This section provides two solutions for implementing a ground protection network against reverse battery. 3.1.
PAGE 17
VNQ660SP Application information This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that, if the microprocessor ground is not shared by the device ground, then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values.
PAGE 18
Application information 3.4 VNQ660SP Maximum demagnetization energy (VCC = 13.5V) Figure 24. Maximum turn-off current versus load inductance ILMAX (A) 100 10 A B C 1 0.01 0.1 1 L (mH) 10 100 A = single pulse at TJstart = 150ºC B= repetitive pulse at TJstart = 100ºC C= repetitive pulse at TJstart = 125ºC VIN, IL Demagnetization Demagnetization Demagnetization t Note: Values are generated with RL = 0Ω.
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VNQ660SP Package and PCB thermal data 4 Package and PCB thermal data 4.1 PowerSO-10 thermal data Figure 25. PowerSO-10 PC board Note: Layout condition of Rth and Zth measurements (PCB FR4 area = 58mm x 58mm, PCB thickness = 2mm, Cu thickness = 35µm, Copper areas: from minimum pad lay-out to 8 cm2). Figure 26.
PAGE 20
Package and PCB thermal data VNQ660SP Figure 27. Thermal impedance junction ambient single pulse ZT H (°C /W) 1000 0.5 cm2 100 2 cm2 4 cm2 10 8 cm2 1 0.1 0.0001 0.001 0.01 0.1 1 T ime (s) 10 100 1000 Equation 1: pulse calculation formula Z THδ = R TH ⋅ δ + Z THtp ( 1 – δ) where δ = tp ⁄ T Figure 28.
PAGE 21
VNQ660SP Package and PCB thermal data Table 13. Thermal parameters Area / island (cm2) 0.5 R1 = R7 = R9 = R11 (°C/W) 0.15 R2 = R8 = R10 = R12 (°C/W) 0.5 R3 (°C/W) 0.4 R4 (°C/W) 10 R5 (°C/W) 15 R6 (°C/W) 26 C1 = C7 = C9 = C11 (W.s/°C) 0.0006 C2 = C8 = C10 = C12 (W.s/°C) 0.0021 C3 (W.s/°C) 0.02 C4 (W.s/°C) 0.5 C5 (W.s/°C) 1.5 C6 (W.s/°C) 5 2 4 8 14.
PAGE 22
Package and packing information VNQ660SP 5 Package and packing information 5.1 ECOPACK® packages In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. ECOPACK® packages are lead-free. The category of Second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
PAGE 23
VNQ660SP Package and packing information Table 14. PowerSO-10 mechanical data mm Dim. Min. Typ. Max. A 3.35 3.65 A(1) 3.4 3.6 A1 0 0.10 B 0.40 0.60 B(1) 0.37 0.53 C 0.35 0.55 C(1) 0.23 0.32 D 9.40 9.60 D1 7.40 7.60 E 9.30 9.50 E2 7.20 7.60 E2(1) 7.30 7.50 E4 5.90 6.10 E4(1) 5.90 6.30 e 1.27 F 1.25 1.35 F(1) 1.20 1.40 H 13.80 14.40 H(1) 13.85 14.35 h 0.50 L 1.20 1.80 L(1) 0.80 1.10 α 0° 8° α(1) 2° 8° 1. Muar only POA P013P.
PAGE 24
Package and packing information 5.3 VNQ660SP PowerSO-10 packing information Figure 30. PowerSO-10 suggested Figure 31. PowerSO-10 tube shipment pad layout (no suffix) 14.6 - 14.9 CASABLANCA B 10.8 - 11 MUAR C 6.30 C A A 0.67 - 0.73 1 9.5 10 9 8 2 3 7 4 5 6 B 0.54 - 0.6 All dimensions are in mm. 1.27 Base Q.ty Bulk Q.ty Casablanca Muar 50 50 1000 1000 Tube length (± 0.5) 532 532 A B 10.4 16.4 4.9 17.2 C (± 0.1) 0.8 0.8 Figure 32.
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VNQ660SP 6 Revision history Revision history Table 15. Document revision history Date Revision Changes 22-Jun-2004 1 Initial release. 14-Jul-2004 2 New revision. 24-Jul-2004 3 Minor changes. Current and voltage convention update (page 2). Configuration diagram (top view) & suggested connections for unused and not connected pins insertion (page 3). 6 cm2 Cu condition insertion in thermal data table (page 3). VCC - output diode section update (page 3).
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VNQ600SP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.