Datasheet

VNS1NV04DP-E Electrical specifications
Doc ID 17344 Rev 3 7/24
2.2 Thermal data
2.3 Electrical characteristics
Table 3. Thermal data
Symbol Parameter Max. value Unit
R
thj-lead
Thermal resistance junction-lead (per channel) 30 °C/W
R
thj-amb
Thermal resistance junction-ambient See Figure 31 °C/W
Table 4. Off
(1)
1. -40 °C < T
j
< 150 °C, unless otherwise specified.
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CLAMP
Drain-source clamp
voltage
V
IN
=0V; I
D
= 0.5 A 40 45 55 V
V
CLTH
Drain-source clamp
threshold voltage
V
IN
=0V; I
D
=2mA 36 V
V
INTH
Input threshold
voltage
V
DS
=V
IN
; I
D
=1mA 0.5 2.5 V
I
ISS
Supply current from
input pin
V
DS
=0V; V
IN
= 5 V 100 150 µA
V
INCL
Input-source clamp
voltage
I
IN
=1mA
I
IN
=-1mA
6
-1.0
6.8 8
-0.3
V
V
I
DSS
Zero input voltage
drain current
(V
IN
=0V)
V
DS
=13V; V
IN
=0V; T
j
=25°C
V
DS
= 25V; V
IN
=0V
30
75
µA
µA
Table 5. On
(1)
1. -40 °C < T
j
< 150 °C, unless otherwise specified.
Symbol Parameter Test conditions Min. Typ. Max. Unit
R
DS(on)
Static drain-source on
resistance
V
IN
=5V; I
D
= 0.5 A; T
j
= 25°C
V
IN
=5V; I
D
=0.5A
250
500
m
m
Table 6. Dynamic
(1)
1. T
j
= 25 °C, unless otherwise specified.
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
Forward
transconductance
V
DD
=13V; I
D
=0.5A 2 S
C
OSS
Output capacitance V
DS
=13V; f=1MHz; V
IN
= 0 V 90 pF