Datasheet

ManualsBrandsST ManualsDiscrete SemiconductorsThyristor, TO-202, 800V, 4A

X04xxxF

August 1998 Ed : 1A

SENSITIVE GATE SCR

Symbol Parameter Value Unit

T(RMS)

RMS on-state current

(180

conduction angle)

Tc= 90

C4 A

Ta= 25

C1.35

T(AV)

Mean on-state current

(180

conduction angle)

Tc= 90

C2.5 A

Ta= 25

C0.9

TSM

Non repetitive surge peak on-state current

initial = 25

C )

tp = 8.3 ms 33 A

tp = 10 ms 30

t Value for fusing tp = 10 ms 4.5 A

dI/dt Critical rate of rise of on-state current

= 10 mA di

/dt = 0.1 A/

50 A/

stg

Storage and operating junction temperature range

- 40, + 150

- 40, + 125

Maximum lead temperature for soldering during 10s at

4.5mm from case

260

ABSOLUTE RATINGS

(limiting values)

T(RMS)

= 4A

DRM

= 400V to 800V

Low I

< 200

FEATURES

Symbol Parameter

Voltage

Unit

DMN

DRM

RRM

Repetitive peak off-state voltage

= 125

C R

= 1K

Ω

400 600 800 V

The X04xxxF series of SCRs uses a high

performance TOP GLASS PNPN technology.

These parts are intended for general purpose

applications where low gate sensitivity is required,

like small engine ignition, SMPS crowbar

protection, food processor.

DESCRIPTION

TO202-3

(Plastic)

1/4

Summary of content (4 pages)

PAGE 1
X04xxxF ® SENSITIVE GATE SCR FEATURES IT(RMS) = 4A VDRM = 400V to 800V Low IGT < 200µA DESCRIPTION K The X04xxxF series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required, like small engine ignition, SMPS crowbar protection, food processor.
PAGE 2
X04xxxF THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 100 °C/W Rth(j-c) Junction to case for DC 7.5 °C/W GATE CHARACTERISTICS PG (AV)= 0.2 W max. PGM = 3 W max. (tp = 20 µs) IGM = 1.2 A max. (tp = 20 µs) VGD = 0.1Vmin. (VD=VDRM RL=3.3kΩ RGK = 1 KΩ Tj= 125°C) ELECTRICAL CHARACTERISTICS Symbol Sensitivity Test Conditions 02 IGT VD=12V (DC) RL=140Ω Tj= 25°C MIN MAX 200 05 20 20 200 50 µA VD=12V (DC) RL=140Ω Tj= 25°C MAX 0.
PAGE 3
X04xxxF Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tcase). Tcase (oC) -85 P (W) P (W) 5 5 360 O 4 4 DC -95 Rth(j-c) 3 = 180 = 120 2 = 90 = 60 1 = 30 0 0 0.5 1 3 o -105 o 2 o o Rth(j-a) I T(AV)(A) 1.5 -115 1 o 2 2.5 3 3.5 o Tamb ( C) 4 Fig.3 : Average on-state current versus case temperature.
PAGE 4
X04xxxF Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ≤ 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). I TSM (A). I2 t (A2 s) I TM (A) 100 100 Tj initial = 25oC I TSM Tj initial o 25 C Tj max 10 10 I2 t Tj max Vto =0.95V Rt =0.100 VTM (V) tp(ms) 1 1 1 0 10 0.5 1 1.5 2 2.5 3 3.5 4 PACKAGE MECHANICAL DATA TO202-3 (Plastic) DIMENSIONS REF. A Millimeters Typ. A C O F D P H N1 N 7.3 0.