Datasheet

BD235 BD236
BD237 BD238
COMPLEMENTARY SILICON POWER TRANSISTORS
■ STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD235 and BD237 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD236 and
BD238 respectively.
®
INTERNAL SCHEMATIC DIAGRAM
February 2003
3
2
1
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD235 BD237
PNP BD236 BD238
V
CBO
Collector-Base Voltage (I
E
= 0) 60 100 V
V
CER
Collector-Base Voltage (R
BE
= 1KΩ)
60 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 60 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 2 A
I
CM
Collector Peak Current (t
p
< 5 ms) 6 A
P
tot
Total Dissipation at T
c
= 25
o
C25W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
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