Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsThyristors & TriacsBTA 26-600 B TRIAC

BTA26 A/B

BTB26 B

March 1995

STANDARD TRIACS

Symbol Parameter Value Unit

T(RMS)

RMS on-state current

(360° conduction angle)

BTA Tc = 90 °C25 A

BTB Tc = 90 °C30

TSM

Non repetitive surge peak on-state current

( Tj initial = 25°C)

tp = 8.3 ms 260 A

tp = 10 ms 250

t value tp = 10 ms 312.5 A

dI/dt Critical rate of rise of on-state current

Gate supply : I

= 500mA di

/dt = 1A/µs

Repetitive

F = 50 Hz

10 A/µs

Non

Repetitive

Tstg

Storage and operating junction temperature range - 40 to + 150

- 40 to + 125

°C

Tl Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

260 °C

TOP 3

(Plastic)

.HIGH SURGE CURRENT CAPABILITY

.COMMUTATION : (dV/dt)c> 10V/µs

.BTA Family :

INSULATING VOLTAGE= 2500V

(RMS)

(UL RECOGNIZED : E81734)

DESCRIPTION

Symbol Parameter BTA26-...A/B / BTB26-... B Unit

400 600 700 800

DRM

RRM

Repetitive peak off-state voltage

Tj = 125 °C

400 600 700 800 V

ABSOLUTE RATINGS (limiting values)

FEATURES

The BTA26 A/B / BTB26 B triac family are high

performance glass passivated PNPN devices.

These parts are suitables for general purpose ap-

plications where high surge current capability is re-

quired. Application such as phase control and

static switching on inductive or resistive load.

1/5

Summary of content (5 pages)

PAGE 1
BTA26 A/B BTB26 B STANDARD TRIACS .. . FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 10V/µs BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA26 A/B / BTB26 B triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load.
PAGE 2
BTA26 A/B / BTB26 B THERMAL RESISTANCES Symbol Rth (j-a) Parameter Value Unit 50 °C/W BTA 1.5 °C/W BTB 1.1 BTA 1.1 BTB 0.8 Junction to ambient Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) °C/W GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs).
PAGE 3
BTA26 A/B / BTB26 B ORDERING INFORMATION Package BTA (Insulated) BTB (Uninsulated) IT(RMS) VDRM / VRRM A V A B 26 400 X X 600 X X 700 X X 800 X X 30 Sensitivity Specification 400 X 600 X 700 X 800 X Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) (BTA) Fig.
PAGE 4
BTA26 A/B / BTB26 B Fig.5 : RMS on-state current versus case temperature. (BTA) Fig.6 : RMS on-state current versus case temperature. (BTB) Fig.7 : Relative variation of thermal impedance versus pulse duration. Fig.8 : Relative variation of gate trigger current and holding current versus junction temperature. Zth/Rth 1.00 Zth( j-c) 0.10 Zt h( j-a) 0.01 tp( s) 1E-3 1E-2 1E-1 1E +0 1 E+1 1 E+2 1 E +3 Fig.9 : Non Repetitive surge peak on-state current versus number of cycles. 4/5 Fig.
PAGE 5
BTA26 A/B / BTB26 B Fig.11 : On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TOP 3 Plastic REF. A H I R 4.6 Millimeters J G B D P L N Cooling method : C Marking : type number Weight : 4.7 g N M DIMENSIONS C Inches Min. Max. Min. Max. A 15.10 15.50 0.594 0.611 B 20.70 21.10 0.814 0.831 C 14.30 15.60 0.561 0.615 D 16.10 16.50 0.632 0.650 G 3.40 - 0.133 - H 4.40 4.60 0.173 0.182 I 4.08 4.17 0.161 0.164 J 1.45 1.55 0.057 0.062 L 0.