Datasheet
Table Of Contents
- 1 Description
- 2 Signal description
- 3 Memory organization
- 4 Device operation
- 5 Instructions
- 6 Initial delivery state
- 7 Maximum rating
- 8 DC and AC parameters
- Table 5. Operating conditions (voltage range W)
- Table 6. Operating conditions (voltage range R)
- Table 7. Operating conditions (voltage range F, for devices identified by process letter T)
- Table 8. Operating conditions (voltage range F, for all other devices)
- Table 9. AC measurement conditions
- Figure 9. AC measurement I/O waveform
- Table 10. Input parameters
- Table 11. Cycling performance
- Table 12. Memory cell data retention
- Table 13. DC characteristics (M24C01/02-W, device grade 6)
- Table 14. DC characteristics (M24C01/02-R, device grade 6)
- Table 15. DC characteristics (M24C02-F, device grade 6)
- Table 16. 400 kHz AC characteristics
- Table 17. 100 kHz AC characteristics (I2C Standard mode)
- Figure 10. Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 400 kHz
- Figure 11. AC waveforms
- 9 Package mechanical data
- Figure 12. TSSOP8 – 8-lead thin shrink small outline, package outline
- Table 18. TSSOP8 – 8-lead thin shrink small outline, package mechanical data
- Figure 13. SO8N – 8-lead plastic small outline, 150 mils body width, package outline
- Table 19. SO8N – 8-lead plastic small outline, 150 mils body width, package data
- Figure 14. PDIP8 – 8-pin plastic DIP, 0.25 mm lead frame, package outline
- Table 20. PDIP8 – 8-pin plastic DIP, 0.25 mm lead frame, package mechanical data
- Figure 15. UFDFPN8 (MLP8) – package outline (UFDFPN: Ultra thin Fine pitch Dual Flat Package, No lead)
- Table 21. UFDFPN8 (MLP8) – package dimensions (UFDFPN: Ultra thin Fine pitch Dual Flat Package, No lead)
- 10 Part numbering
- 11 Revision history
Signal description M24C01/02-W M24C01/02-R M24C02-F
8/34 DocID024020 Rev 2
2.6 Supply voltage (V
CC
)
2.6.1 Operating supply voltage (V
CC
)
Prior to selecting the memory and issuing instructions to it, a valid and stable V
CC
voltage
within the specified [V
CC
(min), V
CC
(max)] range must be applied (see Operating conditions
in
Section 8: DC and AC parameters). In order to secure a stable DC supply voltage, it is
recommended to decouple the V
CC
line with a suitable capacitor (usually of the order of
10
nF to 100 nF) close to the V
CC
/V
SS
package pins.
This voltage must remain stable and valid until the end of the transmission of the instruction
and, for a write instruction, until the completion of the internal write cycle (t
W
).
2.6.2 Power-up conditions
The V
CC
voltage has to rise continuously from 0 V up to the minimum V
CC
operating voltage
(see Operating conditions in
Section 8: DC and AC parameters) and the rise time must not
vary faster than 1 V/µs.
2.6.3 Device reset
In order to prevent inadvertent write operations during power-up, a power-on-reset (POR)
circuit is included.
At power-up, the device does not respond to any instruction until V
CC
has reached the
internal reset threshold voltage. This threshold is lower than the minimum V
CC
operating
voltage (see Operating conditions in
Section 8: DC and AC parameters). When V
CC
passes
over the POR threshold, the device is reset and enters the Standby Power mode; however,
the device must not be accessed until V
CC
reaches a valid and stable DC voltage within the
specified [V
CC
(min), V
CC
(max)] range (see Operating conditions in Section 8: DC and AC
parameters).
In a similar way, during power-down (continuous decrease in V
CC
), the device must not be
accessed when V
CC
drops below V
CC
(min). When V
CC
drops below the threshold voltage,
the device stops responding to any instruction sent to it.
2.6.4 Power-down conditions
During power-down (continuous decrease in V
CC
), the device must be in the Standby Power
mode (mode reached after decoding a Stop condition, assuming that there is no internal
write cycle in progress).