Datasheet

DocID024711 Rev 5 9/33
STCC2540 Electrical characteristics
33
IOL(FAULT)
FAULT output leakage
current
V
IN
= 5.5 V, V
FAULT
= 5 V 1 µA
t
FAULT
FAULT output deglitch delay
FAULT
assertion / deassertion
delay in overcurrent condition
7912ms
V
UVLO
Undervoltage lockout V
IN
rising 3.9 4.1 4.3 V
V
HYST(UVLO)
Undervoltage lockout
hysteresis
T
J
= 25 °C 100 mV
Power switch - AC parameters
(1)
t
ON
Turn on, EN to OUT delay
C
LOAD
= 1 µF, R
LOAD
= 100 
0.8 ms
t
OFF
Turn off, EN to OUT delay 0.3 ms
t
R
OUT (V
BUS
) rise time
C
LOAD
= 1 µF, R
LOAD
= 100 
0.4 ms
t
F
OUT (V
BUS
) fall time 0.2 ms
t
IOS
Current limiter response
time to short-circuit
V
IN
= 5.5 V 3.5 µs
Output discharge
R
DISCHARGE
Discharge resistor 140 200 300 
High-speed data switch - DC parameters
R
ON
Data switch on-resistance
Switch closed, V
IN
= 5 V,
I
S
= 8 mA, test voltage on
DP_OUT, DM_OUT = 0.4 V
2.5 4 
R
ON
Data switch on-resistance
Switch closed, V
IN
= 5 V,
I
S
= 8 mA, test voltage on
DP_OUT, DM_OUT = 3 V
2.7 4 
I
OFF
OFF state leakage current
V
EN
= 0 V, VDP/DM_IN = 3.6 V,
VDP/DM_OUT = 0 V, measure
IDP/DM_OUT
1.5 µA
High-speed data switch - AC parameters
(1)
X
TALK
DP, DM crosstalk
R
TERM
= 50 , C
LOAD
= 5 pF,
V
S
= 1 V
rms,
signal = 0 dBm,
f = 250 MHz
47 dB
O
IRR
OFF state isolation
R
TERM
= 50 , C
LOAD
= 5 pF,
V
S
= 1 V
rms,
signal = 0 dBm,
f = 250 MHz
17 dB
B
w
Bandwidth -3 dB
R
TERM
= 50 , C
LOAD
= 5 pF,
signal = 0 dBm
1100 MHz
Charger emulator - BC1.2 DCP mode
R
DCP_RES
DP_IN to DM_IN short
resistance
CTLx configured for DCP
BC1.2
100 170 
Table 4. Electrical characteristics V
IN
= 4.5 to 5.5 V, -40 °C < T
J
< 125 °C
(unless otherwise specified) (continued)
Symbol Parameter Conditions Min. Typ. Max. Unit