Datasheet

Electrical characteristics STD25N10F7, STF25N10F7, STP25N10F7
4/21 DocID025265 Rev 1
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage (V
GS
= 0)
I
D
= 250 μA 100 - V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 100 V
V
DS
= 100 V; T
C
= 125 °C
10
100
μA
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ± 20 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 μA2.5 4.5V
R
DS(on)
Static drain-source
on- resistance
V
GS
= 10 V, I
D
= 12.5 A 0.027 0.035 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0
-920 - pF
C
oss
Output capacitance - 215 - pF
C
rss
Reverse transfer
capacitance
-19 - pF
Q
g
Total gate charge
V
DD
= 50 V, I
D
= 25 A
V
GS
= 10 V
Figure 18
-14 -nC
Q
gs
Gate-source charge - 7 - nC
Q
gd
Gate-drain charge - 3 - nC