Datasheet

STM32F050xx Electrical characteristics
Doc ID 023683 Rev 1 63/97
6.3.11 Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
● A supply overvoltage is applied to each power supply pin
● A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
6.3.12 I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below V
SS
or
above V
DD
(for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into the
I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (more
than 5 LSB TUE), out of conventional limits of current injection on adjacent pins (more than
–5 µA) or other functional failure (reset occurrence or oscillator frequency deviation, for
example).
Table 42. ESD absolute maximum ratings
Symbol Ratings Conditions Class Maximum value
(1)
1. Data based on characterization results, not tested in production.
Unit
V
ESD(HBM)
Electrostatic discharge
voltage (human body model)
T
A
= +25 °C, conforming
to JESD22-A114
22000
V
V
ESD(CDM)
Electrostatic discharge
voltage (charge device model)
T
A
= +25 °C, conforming
to JESD22-C101
II 500
Table 43. Electrical sensitivities
Symbol Parameter Conditions Class
LU Static latch-up class T
A
= +105 °C conforming to JESD78A II level A